Product Information

SM6426D1RL

SM6426D1RL electronic component of SPS

Datasheet
DFN-8-EP(6.1x5.2) MOSFETs ROHS
Manufacturer: SPS
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5351 ea
Line Total: USD 0.54

421 - Global Stock
Ships to you between
Fri. 03 May to Wed. 08 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
617 - Global Stock


Ships to you between
Fri. 03 May to Wed. 08 May

MOQ : 1
Multiples : 1
1 : USD 0.5071
10 : USD 0.4104
30 : USD 0.3669
100 : USD 0.3156
500 : USD 0.2586
1000 : USD 0.2446

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
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Additional Infomation About Product

The SM6426D1RL with DFN-8-EP(6.1x5.2) is a MOSFET manufactured by SPS. It is a RoHS-compliant, low-threshold, logic-level, N-channel MOSFET in DFN-8(6.1x5.2) package, with an enhanced Pulsed Drain Current for high efficiency and low gate charge for fast switching. It is a single channel device, designed to withstand body-diode reverse voltage of up to 25V and drain-to-source voltage of up to 30V. The device has a Drain-Source On-Resistance of 220O and has a Drain Current of -6.2A and -3.0A with Vgs at 5.5V and 2.5V, respectively. It is characterized by maximum Junction Temperature of 175°C and Operating Temperature range of -55°C to 150°C. The device is designed for high-speed switching and low-frequency operations and is suitable for a wide range of applications such as small-signal amplifiers, high-frequency switching, and power instrumentation.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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