Product Information

SM66406D1RL

SM66406D1RL electronic component of SPS

Datasheet
DFN-8-EP(6.1x5.2) MOSFETs ROHS
Manufacturer: SPS
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.2902 ea
Line Total: USD 1.45

9268 - Global Stock
Ships to you between
Mon. 13 May to Thu. 16 May
MOQ: 5  Multiples: 5
Pack Size: 5

 More Buying Options & Price Grid(s)

Availability Price Quantity
3264 - Global Stock


Ships to you between
Mon. 13 May to Thu. 16 May

MOQ : 5
Multiples : 5
5 : USD 0.2909
50 : USD 0.2351
150 : USD 0.2111
500 : USD 0.1813
3000 : USD 0.1604
6000 : USD 0.1524

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
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Additional Infomation About Product

The SM66406D1RL with DFN-8-EP (6.1x5.2) is a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) manufactured by SPS that is RoHS-compliant. It is a dual N-channel, enhancement-mode device with a P-channel MOSFET. It features a low CDS gate-source capacitance (1.5pF typical) which makes it ideal for high-frequency switching and other applications requiring low capacitance. The low gate-threshold voltage (1.3V typical) enable simple control of the device. The device is able to handle large drain-source voltage (up to 80V) and current (up to 20mA) in a small package (DFN-8-EP). The maximum power dissipation of this device is 170mW.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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