Product Information

2SD1047

2SD1047 electronic component of STMicroelectronics

Datasheet
Bipolar (BJT) Transistor NPN 140 V 12 A 20MHz 100 W Through Hole TO-3P
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.7873 ea
Line Total: USD 2.79

1 - Global Stock
Ships to you between
Mon. 03 Jun to Thu. 06 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1 - WHS 1


Ships to you between
Mon. 03 Jun to Thu. 06 Jun

MOQ : 1
Multiples : 1

Stock Image

2SD1047
STMicroelectronics

1 : USD 2.7873
10 : USD 2.5074
30 : USD 2.3301
100 : USD 2.151
500 : USD 2.0704
1000 : USD 2.034

552 - WHS 2


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 30
Multiples : 30

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2SD1047
STMicroelectronics

30 : USD 2.1901
510 : USD 2.1463

Read More Specifications

     
Manufacturer
Product Category
Case
Mounting
Polarisation
Type Of Transistor
Collector Current
Collector-Emitter Voltage
Frequency
Power Dissipation
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Additional Infomation About Product

2SD1047 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage V = 140 V CEO Typical f = 20 MHz t o Fully characterized at 125 C Application Power supply 3 2 1 Description TO-3P The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking Package Packaging 2SD1047 2SD1047 TO-3P Tube April 2011 Doc ID 018729 Rev 1 1/10 www.st.com 10Electrical ratings 2SD1047 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-base voltage (I = 0) 200 V CBO E V Collector-emitter voltage (I = 0) 140 V CEO B V Emitter-base voltage (I = 0) 6 V EBO C I Collector current 12 A C I Collector peak current (t < 5 ms) 20 A CM P P Total dissipation at T = 25 C 100 W tot c T Storage temperature -65 to 150 C stg T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 1.25 C/W thj-case 2/10 Doc ID 018729 Rev 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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