2SD1047 STMicroelectronics

2SD1047 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage V = 140 V CEO Typical f = 20 MHz t o Fully characterized at 125 C Application Power supply 3 2 1 Description TO-3P The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking Package Packaging 2SD1047 2SD1047 TO-3P Tube April 2011 Doc ID 018729 Rev 1 1/10 www.st.com 10Electrical ratings 2SD1047 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-base voltage (I = 0) 200 V CBO E V Collector-emitter voltage (I = 0) 140 V CEO B V Emitter-base voltage (I = 0) 6 V EBO C I Collector current 12 A C I Collector peak current (t < 5 ms) 20 A CM P P Total dissipation at T = 25 C 100 W tot c T Storage temperature -65 to 150 C stg T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 1.25 C/W thj-case 2/10 Doc ID 018729 Rev 1