BAT54S STMicroelectronics

BAT54 Series Small signal Schottky diodes Main product characteristics BAT54ZFILM I 300 mA F (Single) V 40 V RRM SOD-123 C (typ) 7 pF BAT54JFILM T (max) 150 C j (Single) SOD-323 Features and benefits BAT54KFILM (Single) Low conduction and reverse losses Negligible switching losses SOD-523 Low forward and reverse recovery times BAT54FILM (Single) Extremely fast switching Surface mount device BAT54AFILM Low capacitance diode (Common anode) SOT-23 BAT54SFILM Description (Series) The BAT54 series uses 40 V Schottky barrier BAT54CFILM (Common cathode) diodes packaged in SOD- 23, SOD-323, SOD-523, SOT-23, SOT-323, or SOT-666. BAT54WFILM Order codes (Single) Part Number Marking BAT54CWFILM BAT54FILM D86 (Common cathode) SOT-323 BAT54SFILM D88 BAT54AWFILM (Common anode) BAT54CFILM D87 BAT54AFILM D84 BAT54SWFILM (Series) BAT54WFILM D73 BAT54SWFILM D78 BAT54CWFILM D77 BAT54-07P6FILM BAT54AWFILM D74 (2 parallel diodes) BAT54JFILM 86 BAT54-09P6FILM BAT54KFILM 86 SOT-666 (2 opposite diodes) BAT54-07P6FILM P4 BAT54-09P6FILM Q4 Configurations in top view BAT54ZFILM D72 July 2006 Rev 9 1/13 www.st.comCharacteristics BAT54 Series 1 Characteristics Table 1. Absolute ratings (limiting values at T = 25 C, unless otherwise specified) j Symbol Parameter Value Unit V Repetitive peak reverse voltage 40 V RRM I Continuous forward current 300 mA F I Surge non repetitive forward current t = 10 ms Sinusoidal 1 A FSM p T Storage temperature range -65 to +150 C stg T Operating junction temperature range -40 to +150 C j T Maximum soldering temperature 260 C L Table 2. Thermal parameters Symbol Parameter Value Unit SOT-23, SOD-123 500 C/W (1) R Junction to ambient SOT-323, SOD-323, 550 th(j-a) SOD-523, SOT-666 600 1. Epoxy printed circuit board with recommended pad layout Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit T = 25 C 1 j (1) I Reverse leakage current V = 30 V A R R T = 100 C 100 j I = 0.1 mA 240 F I = 1 mA 320 F mV (2) I = 10 mA 400 V Forward voltage drop T = 25 C F F j I = 30 mA 500 F I = 100 mA 900 F 1. Pulse test: t = 5 ms, < 2 % p 2. Pulse test: t = 380 s, < 2 % p Table 4. Dynamic characteristics Test conditions Symbol Parameter Min. Typ Max. Unit C Diode capacitance V = 1 V, F = 1 MHz 7 10 pF R I = 10 mA, I = 10 mA, T = 25 C F R j t Reverse recovery time 5ns rr I = 1 mA, R = 100 rr L 2/13