BU941ZT STMicroelectronics

BU941ZT/BU941ZTFP BUB941ZT HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES SURFACE-MOUNTING D2PAK (TO-263) 3 3 POWER PACKAGE IN TUBE (NO SUFFIX) 2 2 OR IN TAPE & REEL (SUFFIXT4 ) 1 1 TO-220 TO-220FP APPLICATIONS HIGH RUGGEDNESS ELECTRONIC IGNITIONS 3 1 D2PAK TO-263 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Emitter Voltage (I = 0) 350 V CEO B V Emitter-Base Voltage (I = 0) 5 V EBO C I Collector Current 15 A C ICM Collector Peak Current 30 A I Base Current 1 A B I Base Peak Current 5 A BM BU941ZT BU941ZTFP BUB941ZT o P Total Dissipation at T = 25 C 150 55 150 W tot c o T Storage Temperature -65 to 175 -65 to 175 -65 to 175 C stg o T Max. Operating Junction Temperature 175 175 175 C j 1/8 January 1999BU941ZT / BU941ZTFP / BUB941ZT THERMAL DATA TO-220 TO-220FP D2PAK o R Thermal Resistance Junction-case Max 1 2.7 C/W thj-case o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = 300 V 100 A CEO CE o Current (I = 0) V = 300 V T = 125 C 0.5 mA B CE j I Emitter Cut-off Current V = 5 V 20 mA EBO EB (I = 0) C V * Clamping Voltage I = 100 mA 350 500 V CL C V * Collector-Emitter I = 8 A I = 100 mA 1.8 V CE(sat) C B Saturation Voltage I = 10 A I = 250 mA 1.8 V C B V * Base-Emitter I = 8 A I = 100 mA 2.2 V BE(sat) C B Saturation Voltage I = 10 A I = 250 mA 2.5 V C B h * DC Current Gain I = 5 A V = 10 V 300 FE C CE V Diode Forward Voltage I = 10 A 2.5 V F F Functional Test V = 24 V L= 7 mH 10 A CC (see fig. 1) INDUCTIVE LOAD V = 12 V L= 7 mH V = 300V CC clamp ts Storage Time IC = 7 A IB = 70 mA 15 s t Fall Time 0.5 s f V = 0 R = 47 BE BE (see fig. 3) * Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Safe Operating Area DC Current Gain 2/8