Product Information

BU941ZT

BU941ZT electronic component of STMicroelectronics

Datasheet
Transistors Darlington NPN Power Darlington
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

9: USD 4.152 ea
Line Total: USD 37.37

18 - Global Stock
Ships to you between
Fri. 10 May to Thu. 16 May
MOQ: 9  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
988 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 9
Multiples : 1

Stock Image

BU941ZT
STMicroelectronics

9 : USD 4.5295
12 : USD 3.206
50 : USD 2.6912
100 : USD 2.5441
200 : USD 2.5295
500 : USD 2.251

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Maximum DC Collector Current
Pd - Power Dissipation
Mounting Style
Package / Case
Maximum Operating Temperature
Series
Qualification
Packaging
Brand
Continuous Collector Current
Power Dissipation
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

BU941ZT/BU941ZTFP BUB941ZT HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES SURFACE-MOUNTING D2PAK (TO-263) 3 3 POWER PACKAGE IN TUBE (NO SUFFIX) 2 2 OR IN TAPE & REEL (SUFFIXT4 ) 1 1 TO-220 TO-220FP APPLICATIONS HIGH RUGGEDNESS ELECTRONIC IGNITIONS 3 1 D2PAK TO-263 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Emitter Voltage (I = 0) 350 V CEO B V Emitter-Base Voltage (I = 0) 5 V EBO C I Collector Current 15 A C ICM Collector Peak Current 30 A I Base Current 1 A B I Base Peak Current 5 A BM BU941ZT BU941ZTFP BUB941ZT o P Total Dissipation at T = 25 C 150 55 150 W tot c o T Storage Temperature -65 to 175 -65 to 175 -65 to 175 C stg o T Max. Operating Junction Temperature 175 175 175 C j 1/8 January 1999BU941ZT / BU941ZTFP / BUB941ZT THERMAL DATA TO-220 TO-220FP D2PAK o R Thermal Resistance Junction-case Max 1 2.7 C/W thj-case o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = 300 V 100 A CEO CE o Current (I = 0) V = 300 V T = 125 C 0.5 mA B CE j I Emitter Cut-off Current V = 5 V 20 mA EBO EB (I = 0) C V * Clamping Voltage I = 100 mA 350 500 V CL C V * Collector-Emitter I = 8 A I = 100 mA 1.8 V CE(sat) C B Saturation Voltage I = 10 A I = 250 mA 1.8 V C B V * Base-Emitter I = 8 A I = 100 mA 2.2 V BE(sat) C B Saturation Voltage I = 10 A I = 250 mA 2.5 V C B h * DC Current Gain I = 5 A V = 10 V 300 FE C CE V Diode Forward Voltage I = 10 A 2.5 V F F Functional Test V = 24 V L= 7 mH 10 A CC (see fig. 1) INDUCTIVE LOAD V = 12 V L= 7 mH V = 300V CC clamp ts Storage Time IC = 7 A IB = 70 mA 15 s t Fall Time 0.5 s f V = 0 R = 47 BE BE (see fig. 3) * Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Safe Operating Area DC Current Gain 2/8

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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