BYT03-400 STMicroelectronics

BYT03-400 HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS I 3A F(AV) V 400 V RRM T (max) 150C j V (max) 1.4 V F trr (max) 25 ns FEATURES AND BENEFITS n Very low conduction losses n Negligible switching losses DO-201AD n Low forward & reverse recovery times BYT03-400 DESCRIPTION The BYT03-400 which is using STs 400V planar technology, is specially suited for switching mode base drive & transistor circuits. The device, which is available in axial (DO-201AD) package, is also intended for use as a free wheeling diode in power supplies and other power switching applications. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit V 400 V RRM Repetive peak reverse voltage I 3A F (AV) Average forward current TI = 55C = 0.5 I 60 A FSM Surge non repetitive forward current tp = 10ms Sinusoidal T - 65 to +150 C stg Storage temperature range T 150 C j Maximum operating junction temperature October 2001 - Ed: 2A 1/5 Obsolete Product(s) - Obsolete Product(s)BYT03-400 THERMAL PARAMETERS Symbol Parameter Value Unit R 20 C/W th(j-a) Junction to ambient* * On infinite heatsink with 10mm lead length. STATIC ELECTRICAL CHARACTERISTICS Symbol Parameters Test Conditions Min. Typ. Max. Unit I * 20 A R Reverse leakage current T = 25C V =V j R RRM 0.2 0.5 mA T = 100C j V ** 1.5 V F Forward voltage drop T =25CI =3A j F 1.0 1.4 T = 100C j Pulse test: * tp = 5ms, <2% ** tp = 380s, <2% To evaluate the maximum conduction losses use the following equation: 2 P=1.1xI + 0.08 I F(AV) F (RMS) DYNAMIC ELECTRICAL CHARACTERISTICS Symbol Parameter Test Conditions Min. Typ. Max. Unit trr 16 25 ns Reverse recovery T =25CI = 0.5A I =1A j F R time I = 0.25A rr 55 I =1A dI /dt = - 15A/s F F V = 30V R tfr 75 ns Forward recovery T =25CI =3A dI /dt = 50A/s j F F time VFR=1.1xV max F V 7.0 V FP Forward recovery T =25CI =3A dI /dt = 50A/s j F F voltage 2/5 Obsolete Product(s) - Obsolete Product(s)