BZW50-120B STMicroelectronics

BZW50-120B electronic component of STMicroelectronics
BZW50-120B STMicroelectronics
BZW50-120B ESD Protection Diodes / TVS Diodes
BZW50-120B  Circuit Protection
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BZW50-120B ESD Protection Diodes / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. BZW50-120B ESD Protection Diodes / TVS Diodes are a product manufactured by STMicroelectronics. We provide cost-effective solutions for ESD Protection Diodes / TVS Diodes, ensuring timely deliveries around the world.

Part No. BZW50-120B
Manufacturer: STMicroelectronics
Category: ESD Protection Diodes / TVS Diodes
Description: Diode: transil; 5kW; 133V; 23A; bidirectional; R6
Datasheet: BZW50-120B Datasheet (PDF)
Price (USD)
1: USD 12.3102 ea
Line Total: USD 12.31 
Availability : 0
  
QtyUnit Price
1$ 12.3102
10$ 7.2407
30$ 6.3095
100$ 5.7633

Availability 0
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 6.2267
10$ 5.3949


Availability 0
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 100
Multiples : 100
QtyUnit Price
100$ 4.5838
300$ 4.1933
500$ 3.7627
1000$ 3.301


Availability 0
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 12.3102
10$ 7.2407
30$ 6.3095
100$ 5.7633


Availability 0
Ship by Wed. 12 Nov to Fri. 14 Nov
MOQ : 600
Multiples : 600
QtyUnit Price
600$ 1.364


Availability 0
Ship by Wed. 12 Nov to Fri. 14 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.7593
3$ 3.4123
8$ 2.4291
21$ 2.2845

   
Manufacturer
Product Category
Breakdown Voltage
Semiconductor Structure
Case
Mounting
Kind Of Package
Type Of Diode
Max Forward Impulse Current
Max Off-State Voltage
Power Dissipation
Leakage Current
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BZW50-120B from our ESD Protection Diodes / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BZW50-120B and other electronic components in the ESD Protection Diodes / TVS Diodes category and beyond.

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BZW50 Datasheet 5 kW TVS Features Peak pulse power: 5000 W (10/1000 s) Stand off voltage range from 10 V to 180 V Unidirectional and bidirectional diode Low clamping factor Fast response time R6 UL497B, file number: QVGQ2.E136224 Description Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied ICs. Product status link BZW50 DS0662 - Rev 6 - June 2018 www.st.com For further information contact your local STMicroelectronics sales office. BZW50 Characteristics 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit (1) P Peak pulse power dissipation 5000 W PP P Power dissipation on infinite heatsink 6.5 W I Non repetitive surge peak forward current for unidirectional types 500 A FSM T Storage temperature range -65 to +175 C stg T Maximum operating junction temperature 175 C op T Maximum lead temperature for soldering during 10 s at 5 mm from case. 260 C L 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Table 2. Thermal resistance parameter Symbol Parameter Value Unit R Junction to leads 15 C/W th(j-l) R Junction to ambient on printed circuit. L = 10 mm 65 C/W th(j-a) lead Figure 1. Electrical characteristics (definitions) II II Symbol Parameter II II PPPP FF Unidirectional V Stand-off voltage RM V Breakdown voltage BR V Clamping voltage CL II RR VV VV VV VV FF VV CLCL BRBR RMRM VV VV VV VV I Leakage current V II RM RM CLCL BRBR RMRM RMRM II RMRM I Peak pulse current II VV VV VV PP RMRM RMRM BRBR CLCL II RR II RR T Voltage temperature coefficient V Forward voltage drop F Bidirectional R Dynamic resistance D II II PPPP PPPP Figure 2. Pulse definition for electrical characteristics DS0662 - Rev 6 page 2/10

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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