BZW50-39B STMicroelectronics

BZW50-39B electronic component of STMicroelectronics
BZW50-39B STMicroelectronics
BZW50-39B ESD Protection Diodes / TVS Diodes
BZW50-39B  Circuit Protection
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BZW50-39B ESD Protection Diodes / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. BZW50-39B ESD Protection Diodes / TVS Diodes are a product manufactured by STMicroelectronics. We provide cost-effective solutions for ESD Protection Diodes / TVS Diodes, ensuring timely deliveries around the world.

Part No. BZW50-39B
Manufacturer: STMicroelectronics
Category: ESD Protection Diodes / TVS Diodes
Description: ESD Suppressors / TVS Diodes 5000W 39V Bidirect
Datasheet: BZW50-39B Datasheet (PDF)
Price (USD)
400: USD 1.5555 ea
Line Total: USD 622.2 
Availability : 776
  
Ship by Thu. 13 Nov to Wed. 19 Nov
QtyUnit Price
400$ 1.5555
500$ 1.5473
1000$ 1.4773

Availability 776
Ship by Thu. 13 Nov to Wed. 19 Nov
MOQ : 400
Multiples : 100
QtyUnit Price
400$ 1.5555
500$ 1.5473
1000$ 1.4773


Availability 61
Ship by Tue. 11 Nov to Thu. 13 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.808
3$ 3.584
8$ 2.604
21$ 2.464
50$ 2.45


Availability 35
Ship by Thu. 13 Nov to Wed. 19 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 6.1692
10$ 3.5736
30$ 3.2215
100$ 2.8675


Availability 358
Ship by Thu. 13 Nov to Wed. 19 Nov
MOQ : 69
Multiples : 1
QtyUnit Price
69$ 3.8049
89$ 2.9369
169$ 1.5446

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Package / Case
Pppm - Peak Pulse Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Tradename
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BZW50-39B from our ESD Protection Diodes / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BZW50-39B and other electronic components in the ESD Protection Diodes / TVS Diodes category and beyond.

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BZW50 Datasheet 5 kW TVS Features Peak pulse power: 5000 W (10/1000 s) Stand off voltage range from 10 V to 180 V Unidirectional and bidirectional diode Low clamping factor Fast response time R6 UL497B, file number: QVGQ2.E136224 Description Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied ICs. Product status link BZW50 DS0662 - Rev 6 - June 2018 www.st.com For further information contact your local STMicroelectronics sales office. BZW50 Characteristics 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit (1) P Peak pulse power dissipation 5000 W PP P Power dissipation on infinite heatsink 6.5 W I Non repetitive surge peak forward current for unidirectional types 500 A FSM T Storage temperature range -65 to +175 C stg T Maximum operating junction temperature 175 C op T Maximum lead temperature for soldering during 10 s at 5 mm from case. 260 C L 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Table 2. Thermal resistance parameter Symbol Parameter Value Unit R Junction to leads 15 C/W th(j-l) R Junction to ambient on printed circuit. L = 10 mm 65 C/W th(j-a) lead Figure 1. Electrical characteristics (definitions) II II Symbol Parameter II II PPPP FF Unidirectional V Stand-off voltage RM V Breakdown voltage BR V Clamping voltage CL II RR VV VV VV VV FF VV CLCL BRBR RMRM VV VV VV VV I Leakage current V II RM RM CLCL BRBR RMRM RMRM II RMRM I Peak pulse current II VV VV VV PP RMRM RMRM BRBR CLCL II RR II RR T Voltage temperature coefficient V Forward voltage drop F Bidirectional R Dynamic resistance D II II PPPP PPPP Figure 2. Pulse definition for electrical characteristics DS0662 - Rev 6 page 2/10

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
C-Max (VA)
SG3
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ST2
ST7
STM
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