ESDA5V3LY STMicroelectronics

ESDALY Automotive dual Transil array for ESD protection Datasheet - production data Applications Where transient overvoltage protection in ESD sensitive equipment is required, such as: Entertainment Signal communications Connectivity Comfort and convenience Description SOT23-3L This device is a diode array designed to protect 1 line or 2 lines against ESD transients. The device is ideal for applications where both reduced line capacitance and board space saving Features are required AEC-Q101 qualified It can also be used as bidirectional suppressor by Dual unidirectional Transil functions connecting only pin 1 and 2. Low leakage current: IR max. < 20 A at VBR Figure 1: Functional diagram 300 W peak pulse power (8/20 s) Benefits High ESD protection level: up to 25 kV 1 High integration Suitable for high density boards AEC-Q101 qualified 3 Complies with the following standards ISO 10605: C = 330 pF, R = 330 2 30 kV (air discharge) 30 kV (contact discharge) ISO 7637-3 fast transient Pulse a: V = -150 V S Pulse b: V = +100 V S ISO 7637-3 slow transient Positive pulse: VS = +85 V Negative pulse : VS = -85 V July 2017 DocID022075 Rev 2 1/12 www.st.com This is information on a product in full production. Characteristics ESDALY 1 Characteristics Table 1: Absolute maximum ratings (Tamb = 25 C) Symbol Parameter Value Unit ISO 10605 (C = 330 pF, R = 330 ): Contact discharge 30 Air discharge 30 (1) V Peak pulse voltage kV pp ISO 10605 (C = 150 pF, R = 330 ): Contact discharge 30 Air discharge 30 Peak pulse power (8/20 s) Ppp 300 W ESDA5V3LY 25 ESDA6V1LY 18 I Peak pulse current (8/20 s) ESDA14V2LY 14 A pp ESDA25LY 7 6.3 ESDA37LY T Operating junction temperature range -40 to 150 C j Tstg Storage junction temperature range -65 to 150 C T Maximum temperature for soldering during 10 s 260 C L Notes: (1) For a surge greater than the maximum values, the diode will fail in short-circuit. Figure 2: Electrical characteristics (definitions) I Symbol Parameter IF V = Breakdown voltage BR V = Clamping voltage CL V = Stand-off voltage RM VBR I = Leakage current VF RM Vcl VRM I = Forward current F V IRM I = Peak pulse current PP I = Breakdown current R V = Forward voltage drop F C = Capacitance Slope = 1/Rd R = Dynamic impedance d IPP T = Voltage temperature 2/12 DocID022075 Rev 2