FERD20M60 Field effect rectifier Datasheet - production data Description This single rectifier is based on a proprietary . technology, enabling to achieve the best in class . V /I trade-off for a given silicon surface. F R . Packaged in TO-220AB and IPAK, this device is intended to be used in rectification and freewheeling operations in switch-mode power supplies . Table 1. Device summary 2 % 7 . ,3 Symbol Value I 20 A F(AV) V 60 V RRM Features T (max) +175 C j ST proprietary process V (typ) 0.30 V F Stable leakage current over reverse voltage Low forward voltage drop High frequency operation June 2015 DocID027193 Rev 2 1/8 This is information on a product in full production. www.st.comCharacteristics FERD20M60 1 Characteristics Table 2. Absolute ratings (limiting values, per diode, at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 60 V RRM I Forward rms current 60 A F(RMS) I Average forward current, = 0.5 T = 150 C 20 A F(AV) c t = 10 ms p I Surge non repetitive forward current 275 A FSM sinusoidal T Storage temperature range -65 to + 175 C stg (1) T Maximum operating junction temperature 175 C j dPtot 1 --------------- -------------------------- 1. < condition to avoid thermal runaway for a diode on its own heatsink. dTj Rth()j a Table 3. Thermal resistance Symbol Parameter Value (max) Unit R Junction to case 1.6 C/W th(j-c) Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C 125 A j V = 45 V R = 125 C 10 20 mA T j (1) I Reverse leakage current R T = 25 C 230 A j V = V R RRM T = 125 C 15 30 mA j T = 25 C 0.36 j I = 5 A F T = 125 C 0.30 0.35 j T = 25 C 0.42 0.47 j (2) V Forward voltage drop I = 10A V F F = 125 C 0.39 0.44 T j T = 25 C 0.51 0.56 j I = 20 A F T = 125 C 0.51 0.56 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.32 x I + 0.012 I F(AV) F (RMS 2/8 DocID027193 Rev 2