X-On Electronics has gained recognition as a prominent supplier of FERD30S50DJF-TR Rectifiers across the USA, India, Europe, Australia, and various other global locations. FERD30S50DJF-TR Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

FERD30S50DJF-TR STMicroelectronics

FERD30S50DJF-TR electronic component of STMicroelectronics
FERD30S50DJF-TR STMicroelectronics
FERD30S50DJF-TR Rectifiers
FERD30S50DJF-TR  Semiconductors

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See Product Specifications
Part No. FERD30S50DJF-TR
Manufacturer: STMicroelectronics
Category: Rectifiers
Description: Rectifiers Field Effect Rectifier
Datasheet: FERD30S50DJF-TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 3000
Multiples : 3000
3000 : USD 1.5654
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.3015
10 : USD 1.9526
100 : USD 1.5634
250 : USD 1.4829
500 : USD 1.3621
1000 : USD 1.2078
3000 : USD 1.2078
6000 : USD 1.1643
9000 : USD 1.1425
N/A

Obsolete
0
MOQ : 30
Multiples : 1
30 : USD 2.3486
100 : USD 1.3979
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Operating Temperature Range
Product
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
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We are delighted to provide the FERD30S50DJF-TR from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FERD30S50DJF-TR and other electronic components in the Rectifiers category and beyond.

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FERD30S50 Field effect rectifier Datasheet production data Features A A CMOS proprietary process Stable leakage current over reverse voltage K Low forward voltage drop A High frequency operation A Description K K This single rectifier is based on a proprietary technology, enabling to achieve the best in class V /I trade-off for a given silicon surface. F R Packaged in PowerFLAT 5x6, this device is intended to be used in rectification and freewheeling operations in switch-mode power A A supplies. PowerFLAT 5x6 FERD30S50DJF Table 1. Device summary Symbol Value I 30 A F(AV) V 50 V RRM T +150 C j (max) V (typ) 0.33 V F TM: PowerFLAT is a trademark of STMicroelectronics November 2013 Doc ID024715 Rev 2 1/8 This is information on a product in full production. www.st.com Obsolete Product(s) - Obsolete Product(s)Characteristics FERD30S50 1 Characteristics Table 2. Absolute ratings (limiting values, at 25 C, unless otherwise specified, anode terminals short-circuited) Symbol Parameter Value Unit V Repetitive peak reverse voltage 50 V RRM I Forward rms current 45 A F(RMS) I Average forward current, = 0.5 T = 95 C 30 A F(AV) c I Surge non repetitive forward current t = 10 ms sinusoidal 180 A FSM p T Storage temperature range -65 to + 175 C stg (1) T Maximum operating junction temperature 150 C j 1 dPtot < 1. condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal resistance Symbol Parameter Value (max) Unit R Junction to case 2.6 C/W th(j-c) Table 4. Static electrical characteristics (anode terminals short-circuited) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 125 C V = 35 V 25 j R (1) I Reverse leakage current T = 25 C 0.8 mA R j V = V R RRM T = 125 C 30 60 j T = 25 C 0.32 j I = 5 A F T = 125 C 0.25 j T = 25 C 0.37 j (2) V Forward voltage drop I = 10 A V F F T = 125 C 0.33 j T = 25 C 0.415 0.47 j I = 15 A F T = 125 C 0.39 0.45 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.205 x I + 0.017 I F(AV) F (RMS) 2/8 Doc ID024715 Rev 2 Obsolete Product(s) - Obsolete Product(s)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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