Product Information

M24C32-RDW6TP

M24C32-RDW6TP electronic component of STMicroelectronics

Datasheet
EEPROM EEPROM S I2C 32k
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

4000: USD 0.2336 ea
Line Total: USD 934.4

34920 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 4000  Multiples: 4000
Pack Size: 4000

 More Buying Options & Price Grid(s)

Availability Price Quantity
34920 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 4000
Multiples : 4000

Stock Image

M24C32-RDW6TP
STMicroelectronics

4000 : USD 0.2336
24000 : USD 0.2336

4 - WHS 2


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

M24C32-RDW6TP
STMicroelectronics

1 : USD 0.6466
10 : USD 0.5238
30 : USD 0.4613
100 : USD 0.4009
500 : USD 0.3646
1000 : USD 0.3445

34920 - WHS 3


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 4000
Multiples : 4000

Stock Image

M24C32-RDW6TP
STMicroelectronics

4000 : USD 0.2336

3880 - WHS 4


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 113
Multiples : 1

Stock Image

M24C32-RDW6TP
STMicroelectronics

113 : USD 0.3411
200 : USD 0.3396
500 : USD 0.3137
1000 : USD 0.3074

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
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Supply Voltage - Max
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Supply Current - Max
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Additional Infomation About Product

M24C32-W M24C32-R M24C32-F M24C32-X M24C32-DF 32-Kbit serial IC bus EEPROM Datasheet - production data Features 2 Compatible with all I C bus modes: 1 MHz 400 kHz 100 kHz PDIP8 (BN) Memory array: 32 Kbit (4 Kbyte) of EEPROM Page size: 32 byte Additional Write lockable page (M24C32-D order codes) Single supply voltage: 1.7 V to 5.5 V over 40 C / +85 C TSSOP8 (DW) SO8 (MN) 169 mil width 150 mil width 1.6 V to 5.5 V over 20 C / +85 C Write: Byte Write within 5 ms Page Write within 5 ms Random and sequential Read modes Write protect of the whole memory array UFDFPN5 (MH) UFDFPN8 (MC) Enhanced ESD/Latch-Up protection DFN8 - 2x3 mm DFN5 - 1.7x1.4 mm More than 4 million Write cycles More than 200-years data retention Packages PDIP8 ECOPACK2 WLCSP (CU) SO8 ECOPACK2 TSSOP8 ECOPACK2 UFDFPN8 ECOPACK2 WLCSP ECOPACK2 UFDFPN5 ECOPACK2 Unsawn wafer (each die is tested) Unsawn wafer September 2017 DocID4578 Rev 30 1/51 This is information on a product in full production. www.st.comContents M24C32-W M24C32-R M24C32-F M24C32-X M24C32-DF Contents 1 Description . 6 2 Signal description . 8 2.1 Serial Clock (SCL) . 8 2.2 Serial Data (SDA) 8 2.3 Chip Enable (E2, E1, E0) 8 2.4 Write Control (WC) . 8 2.5 V (ground) . 9 SS 2.6 Supply voltage (V ) . 9 CC 2.6.1 Operating supply voltage (V ) 9 CC 2.6.2 Power-up conditions 9 2.6.3 Device reset . 9 2.6.4 Power-down conditions 9 3 Memory organization . 10 4 Device operation . 11 4.1 Start condition 12 4.2 Stop condition 12 4.3 Data input . 12 4.4 Acknowledge bit (ACK) 12 4.5 Device addressing 13 5 Instructions . 14 5.1 Write operations 14 5.1.1 Byte Write . 15 5.1.2 Page Write . 16 5.1.3 Write Identification Page (M24C32-D only) 17 5.1.4 Lock Identification Page (M24C32-D only) 17 5.1.5 ECC (Error Correction Code) and Write cycling 17 5.1.6 Minimizing Write delays by polling on ACK 18 5.2 Read operations 19 5.2.1 Random Address Read . 20 2/51 DocID4578 Rev 30

HS Compliance

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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