Product Information

M24C64T-FCU6T/TF

M24C64T-FCU6T/TF electronic component of STMicroelectronics

Datasheet
EEPROM 64-Kbit serial I2C bus EEPROM 4 balls CSP

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

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M24C64T-FCU6T/TF
STMicroelectronics

1 : USD 0.6466
10 : USD 0.5711
100 : USD 0.2005
500 : USD 0.1971
1000 : USD 0.1919
2500 : USD 0.1724
10000 : USD 0.1692
20000 : USD 0.1649
50000 : USD 0.1541
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Package / Case
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Memory Size
Organisation
Supply Voltage - Min
Supply Voltage - Max
Minimum Operating Temperature
Maximum Operating Temperature
Maximum Clock Frequency
Access Time
Data Retention
Supply Current - Max
Series
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Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
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M24C64T-FCU 64-Kbit serial IC bus EEPROM 4 balls CSP Datasheet - production data Features Compatible with the 400 kHz IC protocol High speed 1MHz transfer rate Memory array: 64 Kbit (8 Kbyte) of EEPROM Page size: 32 byte Specific device code WLCSP (CU) Supply voltage range: 1.7 V to 5.5 V Operating temperature range V = 1.7 V to 5.5V over -40C / +85C CC V = 1.6 V to 5.5V over 0C / +85C CC Write Byte Write within 5 ms Page Write within 5 ms Random and sequential Read modes Software Write protect Upper quarter memory array Upper half memory array Upper 3/4 memory array Whole memory array ESD protection Human Body Model: 4 kV More than 4 million Write cycles More than 200-years data retention Package WLCSP, RoHS and Halogen free compliant (ECOPACK2 ) March 2017 DocID028393 Rev 2 1/36 This is information on a product in full production. www.st.comContents M24C64T-FCU Contents 1 Description . 6 2 Signal description . 8 2.1 Serial Clock (SCL) . 8 2.2 Serial Data (SDA) 8 2.3 V (ground) . 8 SS 2.4 Supply voltage (V ) . 8 CC 2.4.1 Operating supply voltage (V ) 8 CC 2.4.2 Power-up conditions 8 2.4.3 Device reset . 8 2.4.4 Power-down conditions 9 3 Memory organization . 10 4 Device operation . 11 4.1 Start condition 12 4.2 Stop condition 12 4.3 Data input . 12 4.4 Acknowledge bit (ACK) 12 4.5 Device addressing 13 5 Instructions . 14 5.1 Write operations 14 5.1.1 Byte Write . 15 5.1.2 Page Write . 16 5.1.3 Write protection . 17 5.1.4 Minimizing Write delays by polling on ACK 18 5.2 Read operations 19 5.2.1 Random Address Read . 19 5.2.2 Current Address Read 20 5.2.3 Sequential Read 20 5.2.4 Read the Write Protect register . 20 6 Initial delivery state . 21 2/36 DocID028393 Rev 2

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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