Product Information

M93C86-MN6TP

M93C86-MN6TP electronic component of STMicroelectronics

Datasheet
EEPROM Serial-Microwire 16K-bit 2K x 8/1K x 16 5V 8-Pin SO N T/R

Manufacturer: STMicroelectronics
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Price (USD)

2500: USD 0.2282 ea
Line Total: USD 570.5

0 - Global Stock
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 2500
Multiples : 2500

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M93C86-MN6TP
STMicroelectronics

2500 : USD 0.2282

     
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RoHS - XON
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M93C86-x M93C76-x M93C66-x M93C56-x M93C46-x 16-Kbit, 8-Kbit, 4-Kbit, 2-Kbit and 1-Kbit (8-bit or 16-bit wide) MICROWIRE serial access EEPROM Datasheet - production data READY/BUSY signal during programming 2 MHz clock rate Sequential read operation Enhanced ESD/latch-up behavior More than 4 million write cycles PDIP8 (BN) More than 200-year data retention Packages SO8, TSSOP8, UFDFPN8 packages: RoHS-compliant and Halogen-free (ECOPACK) PDIP8 package: SO8 (MN) RoHS-compliant (ECOPACK1) 150 mil width Table 1. Device summary Part Memory Supply Reference number size voltage TSSOP8 (DW) M93C46-W 2.5 V to 5.5 V 169 mil width M93C46-x 1 Kbit M93C46-R 1.8 V to 5.5 V M93C56-W 2.5 V to 5.5 V M93C56-x 2 Kbit M93C56-R 1.8 V to 5.5 V M93C66-W 2.5 V to 5.5 V M93C66-x 4 Kbit UFDFPN8 (MC) M93C66-R 1.8 V to 5.5 V 2 x 3 mm - M93C76-R 8 Kbit 1.8 V to 5.5 V M93C86-W 2.5 V to 5.5 V M93C86-x 16 Kbit M93C86-R 1.8 V to 5.5 V Features Industry standard MICROWIRE bus Single supply voltage: 2.5 V to 5.5 V for M93Cx6-W 1.8 V to 5.5 V for M93Cx6-R Dual organization: by word (x16) or byte (x8) Programming instructions that work on: byte, word or entire memory Self-timed programming cycle with auto-erase: 5 ms November 2013 DocID4997 Rev 15 1/33 This is information on a product in full production. www.st.comContents M93C86-x M93C76-R M93C66-x M93C56-x M93C46-x Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2 Connecting to the serial bus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 Operating features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 3.1 Supply voltage (V ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 CC 3.1.1 Operating supply voltage (V ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 CC 3.1.2 Power-up conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 3.1.3 Power-up and device reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 3.1.4 Power-down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Memory organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Instructions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.1 Read Data from Memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5.2 Erase and Write data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5.2.1 Write Enable and Write Disable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5.2.2 Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5.2.3 Write All . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 5.2.4 Erase Byte or Word . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 5.2.5 Erase All . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6READY/BUSY status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 7 Initial delivery state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 8 Clock pulse counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 9 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 10 DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 11 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 12 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 2/33 DocID4997 Rev 15

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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