Product Information

M95512-DRDW3TP/K

M95512-DRDW3TP/K electronic component of STMicroelectronics

Datasheet
EEPROM Serial-SPI 512K-bit 64K x 8 2.5V/3.3V/5V Automotive 8-Pin TSSOP T/R
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

4000: USD 1.6703 ea
Line Total: USD 6681.2

3880 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 4000  Multiples: 4000
Pack Size: 4000

 More Buying Options & Price Grid(s)

Availability Price Quantity
3880 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 4000
Multiples : 4000

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M95512-DRDW3TP/K
STMicroelectronics

4000 : USD 1.9453

19 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

M95512-DRDW3TP/K
STMicroelectronics

1 : USD 1.7122
10 : USD 1.7122

38 - WHS 3


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

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M95512-DRDW3TP/K
STMicroelectronics

1 : USD 2.0074
10 : USD 1.9105
30 : USD 1.853
100 : USD 1.7943
500 : USD 1.7673
1000 : USD 1.7561

19 - WHS 4


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 5
Multiples : 1

Stock Image

M95512-DRDW3TP/K
STMicroelectronics

5 : USD 1.7122

3880 - WHS 5


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 4000
Multiples : 4000

Stock Image

M95512-DRDW3TP/K
STMicroelectronics

4000 : USD 1.6703

Read More Specifications

     
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Additional Infomation About Product

M95512-A125 M95512-A145 Automotive 512-Kbit serial SPI bus EEPROMs with high-speed clock Datasheet - production data Features Compatible with the Serial Peripheral Interface (SPI) bus Memory array SO8 (MN) 512 Kbit (64 Kbyte) of EEPROM 150 mil width Page size: 128 byte Write protection by block: 1/4, 1/2 or whole memory Additional Write lockable Page (Identification page) TSSOP8 (DW) Extended temperature and voltage ranges 169 mil width Up to 125 C (V from 1.7 V to 5.5 V) CC Up to 145 C (V from 2.5 V to 5.5 V) CC High speed clock frequency 16 MHz for V 4.5 V CC 10 MHz for V 2.5 V CC 5 MHz for V 1.7 V CC WFDFPN8 (MF) Schmitt trigger inputs for noise filtering 2 x 3 mm Short Write cycle time Byte Write within 4 ms Page Write within 4 ms Write cycle endurance 4 million Write cycles at 25 C 1.2 million Write cycles at 85 C 600 k Write cycles at 125 C 400 k Write cycles at 145 C Data retention 50 years at 125 C 100 years at 25 C ESD Protection (Human Body Model) 4000 V Packages RoHS-compliant and halogen-free (ECOPACK2 ) January 2016 DocID022682 Rev 8 1/44 This is information on a product in full production. www.st.comContents M95512-A125 M95512-A145 Contents 1 Description . 6 2 Signal description . 8 2.1 Serial Data output (Q) 8 2.2 Serial Data input (D) 8 2.3 Serial Clock (C) . 8 2.4 Chip Select (S) 8 2.5 Hold (HOLD) 8 2.6 Write Protect (W) 8 2.7 V ground . 8 SS 2.8 V supply voltage . 9 CC 3 Operating features . 10 3.1 Active power and Standby power modes . 10 3.2 SPI modes 10 3.3 Hold mode .11 3.4 Protocol control and data protection 11 3.4.1 Protocol control . 11 3.4.2 Status Register and data protection 12 3.5 Identification page 13 4 Instructions . 15 4.1 Write Enable (WREN) . 16 4.2 Write Disable (WRDI) 16 4.3 Read Status Register (RDSR) . 17 4.4 Write Status Register (WRSR) . 18 4.5 Read from Memory Array (READ) 19 4.6 Write to Memory Array (WRITE) . 20 4.7 Read Identification Page (RDID) . 22 4.8 Write Identification Page (WRID) . 23 4.9 Read Lock Status (RDLS) 23 4.10 Lock Identification Page (LID) . 24 2/44 DocID022682 Rev 8

HS Compliance

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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