P0109DA Datasheet 0.8 A 400 V high immunity sensitive SCR thyristor in TO-92 A Features On-state rms current, I 0.8 A T(RMS) 125 C max. T j G Ultra low 1 A gate current K Repetitive peak off-state voltage, V 400 V DRM/VRRM ECOPACK2 compliant Applications A G K Gate driver for large Thyristors TO-92 Overvoltage crowbar protection Ground fault circuit interrupters Arc fault circuit interrupter Standby mode power supplies Residual current detector Description Thanks to highly sensitive triggering levels, the 0.8 A P0109DA SCR thyristor is suitable for all applications where available gate current is limited. This device offers a high blocking voltage of 400 V, ideal for applications like interrupters circuits. Product status link The P0109DA is available in through-hole TO-92 package. P0109DA Product summary I 0.8 A T(RMS) V /V 400 V DRM RRM I 1 A GT T max. 125 C j DS13154 - Rev 2 - June 2020 www.st.com For further information contact your local STMicroelectronics sales office.P0109DA Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values) Symbol Parameters Value Unit I On-state RMS current (180 conduction angle) 0.8 A T(RMS) T = 55 C L I Average on-state current (180 conduction angle) 0.5 A T(AV) t = 8.3 ms 8 Non repetitive surge peak on-state current, p I T = 25 C A TSM j T initial = 25 C t = 10 ms j 7 p 2 2 2 t = 10 ms T = 25 C 0.24 I t I t value for fusing p j A s Critical rate of rise of on-state current T = 25 C dl/dt F = 60 Hz 50 A/s j I = 2 x I , t 100 ns G GT r V / V Repetitive peak off-state voltage T = 125 C 400 V DRM RRM j I Peak gate current t = 20 s T = 125 C 1 A GM p j P Average gate power dissipation T = 125 C 0.1 W G(AV) j T Storage junction temperature range -40 to +150 C stg T Operating junction temperature range -40 to +125 C j Table 2. Electrical characteristics (T = 25 C, unless otherwise specified) j Symbol Parameters Value Unit I Max. 1 A GT V = 12 V, R = 33 D L V Max. 0.8 V GT V V = V , R = 3.3 k, R = 1 k, T = 125 C Min. 0.1 V GD D DRM L GK j V I = 10 A RG RG Min. 8 I I = 50 mA, R = 1 k Max. 5 mA H T GK I I = 1.2 I , R = 1 k Max. 6 mA L G GT GK V = 67 % V , R = 1 k, T = 125 C dV/dt Min. 75 V/s D DRM GK j Table 3. Static electrical characteristics T Symbol Test conditions Value Unit j V I = 1.6 A, t = 380 s 25 C Max. 1.95 V T TM p V Threshold on-state voltage 125 C Max. 0.95 V TO R Dynamic resistance 125 C Max. 600 m d I V = V 25 C 1 A DRM D DRM Max. I V = V 125 C 0.1 mA RRM R RRM DS13154 - Rev 2 page 2/9