Product Information

P6KE47CA

P6KE47CA electronic component of STMicroelectronics

Datasheet
Diode: transil; 600W; 44.7V; 9.7A; bidirectional; DO15

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 0.0954 ea
Line Total: USD 95.4

48500 - Global Stock
Ships to you between
Thu. 04 Apr to Wed. 10 Apr
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
5 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 1
Multiples : 1

Stock Image

P6KE47CA
STMicroelectronics

1 : USD 0.1309

48500 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 1000
Multiples : 1000

Stock Image

P6KE47CA
STMicroelectronics

1000 : USD 0.0959
2000 : USD 0.0951
5000 : USD 0.0932

     
Manufacturer
Product Category
Breakdown Voltage
Case
Semiconductor Structure
Mounting
Kind Of Package
Type Of Diode
Max Forward Impulse Current
Max Off-State Voltage
Leakage Current
Power Dissipation
Category
Brand Category
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P6KE Transil, transient voltage surge suppressor (TVS) Datasheet production data Features Peak pulse power: 600 W (10/1000 s ) Stand-off voltage range 6.8 to 440 V Unidirectional and bidirectional types Low clamping factor Fast response time UL recognized DO-15 (DO-204AC) Complies with the following standards IEC 61000-4-2 level 4 15 kV (air discharge) 8 kV (contact discharge) MIL STD 883G, method 3015-7 Class 3 HBM (human body model) Description Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied ICs. TM:Transil is a trademarks of STMicroelectronics. April 2012 Doc ID 3068 Rev 7 1/9 This is information on a product in full production. www.st.com 9Characteristics P6KE 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit (1) P Peak pulse power dissipation T = T 600 W PP j initial amb P Power dissipation on infinite heatsink T = 75 C 5 W amb t = 10 ms Non repetitive surge peak forward current for unidirectional p I 100 A FSM types T = T j initial amb T Storage temperature range -65 to + 175 C stg T Maximum operating junction temperature 175 C j T Maximum lead temperature for soldering during 10 s at 5 mm from case. 260 C L 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Table 2. Thermal resistances Symbol Parameter Value Unit R Junction to leads 20 th(j-l) C/W R Junction to ambient on printed circuit. L = 10 mm 75 th(j-a) lead Figure 1. Electrical characteristics - definitions II II Symbol Parameter II II FF PPPP Unidirectional V Stand-off voltage RM V Breakdown voltage BR V Clamping voltage CL II RR VV VV VV VV FF VV CLCL BRBR RMRM VV VV VV VV I Leakage current V CLCL BRBR RMRM II RM RM RMRM II I Peak pulse current RMRM II PP RMRM VV VV VV RMRM BRBR CLCL II II RR RR T Voltage temperature coefficient V Forward voltage drop F Bidirectional R Dynamic resistance D II PPPP II PPPP Figure 2. Pulse definition for electrical characteristics Repetitive pulse current t = rise time (s) r t = pulse duration time (s) p t t r p 2/9 Doc ID 3068 Rev 7

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
C-Max
C-Max (VA)
SG3
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ST7
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STMICRELECTRONICS
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