PD20010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet production data Features Excellent thermal stability Common source configuration P = 10 W with 11 dB gain 2 GHz / 13.6 V OUT Plastic package ESD protection PowerSO-10RF (formed lead) In compliance with the 2002/95/EC European directive Description The PD20010-E is a common source N-Channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It PowerSO-10RF operates at 13.6 V in common source mode at (straight lead) frequencies of up to 1 GHz. PD20010-E boasts the excellent gain, linearity and reliability of STs latest LDMOS technology mounted in the first true Figure 1. Pin connection SMD plastic RF power package, PowerSO-10RF. PD20010-Es superior linearity performance Source makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC Drain approved, high power SMD package. It has been Gate specially optimized for RF needs and offers excellent RF performances and ease of assembly. Table 1. Device summary Order codes Packages Packing PD20010-E PowerSO-10RF (formed lead) Tube PD20010S-E PowerSO-10RF (straight lead) Tube PD20010TR-E PowerSO-10RF (formed lead) Tape and reel PD20010STR-E PowerSO-10RF (straight lead) Tape and reel May 2012 Doc ID 15514 Rev 2 1/13 This is information on a product in full production. www.st.com 13Contents PD20010-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 ESD protection characteristics 4 2.4 Moisture sensitivity level . 4 3 Typical performance . 5 4 Package mechanical data . 6 5 Revision history . 11 2/13 Doc ID 15514 Rev 2