SCT30N120 STMicroelectronics

SCT30N120 electronic component of STMicroelectronics
SCT30N120 STMicroelectronics
SCT30N120 SiC MOSFETs
SCT30N120  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SCT30N120 SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. SCT30N120 SiC MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

Part No. SCT30N120
Manufacturer: STMicroelectronics
Category: SiC MOSFETs
Description: SiC MOSFETs 1200V silicon carbide MOSFET
Datasheet: SCT30N120 Datasheet (PDF)
Price (USD)
600: USD 18.536 ea
Line Total: USD 11121.6 
Availability : 1746
  
Ship by Thu. 13 Nov to Wed. 19 Nov
QtyUnit Price
600$ 18.536

Availability 1746
Ship by Thu. 13 Nov to Wed. 19 Nov
MOQ : 600
Multiples : 600
QtyUnit Price
600$ 18.536


Availability 576
Ship by Thu. 13 Nov to Wed. 19 Nov
MOQ : 30
Multiples : 1
QtyUnit Price
30$ 19.201
100$ 18.075
300$ 17.775


Availability 19
Ship by Tue. 11 Nov to Thu. 13 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 31.206
2$ 29.498
30$ 28.364

   
Manufacturer
Product Category
Mounting Style
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Package / Case
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SCT30N120 from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SCT30N120 and other electronic components in the SiC MOSFETs category and beyond.

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The SCT30N120 is a high voltage Insulated Gate Bipolar Transistor (IGBT) produced by STMicroelectronics. It is a 30A IGBT, with an enhanced CEO buffer structure and an operating voltage of up to 1200V. This makes it suited for applications such as motor drive, welding, and UPS power supply. The device has an improved dv/dt capability for surge current applications, and low collector-emitter saturation voltage for improved efficiency. The significantly improved turn-off performance of the integrated MOSFET can reduce switching losses, making the SCT30N120 ideal for power conversion applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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