SCT30N120 STMicroelectronics

Name: SCT30N120
Brand: STMicroelectronics
SKU: SCT30N120_STMicroelectronics
Availability: InStock
Rating: 5 (11 reviews)

SCT30N120 electronic component of STMicroelectronics

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SCT30N120 SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. SCT30N120 SiC MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

Part No.	SCT30N120
Manufacturer:	STMicroelectronics
Category:	SiC MOSFETs
Description:	SiC MOSFETs 1200V silicon carbide MOSFET
Datasheet:	SCT30N120 Datasheet (PDF)

Price (USD)

30: USD 19.201 ea
Line Total: USD 576.03

Availability : 576

Ship by Fri. 14 Nov to Thu. 20 Nov

Qty Unit Price
30 $ 19.201
100 $ 18.075
300 $ 17.775

SCT30N120 More Buying Options & Price Grid(s)

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Availability

Price (USD)

Buy Price

Quantity

Availability 1746

Ship by Fri. 14 Nov to Thu. 20 Nov

MOQ : 600
Multiples : 600

Qty Unit Price
600 $ 18.536

Availability 576

Ship by Fri. 14 Nov to Thu. 20 Nov

MOQ : 30
Multiples : 1

Qty Unit Price
30 $ 19.201
100 $ 18.075
300 $ 17.775

Availability 19

Ship by Wed. 12 Nov to Fri. 14 Nov

MOQ : 1
Multiples : 1

Qty Unit Price
1 $ 31.206
2 $ 29.498
30 $ 28.364

Specifications

Manufacturer

STMicroelectronics STMicroelectronics

Product Category

SiC MOSFETs SiC MOSFETs

Mounting Style

Through Hole Through Hole

Transistor Polarity

N - Channel N - Channel

Number of Channels

1 Channel 1 Channel

Vds - Drain-Source Breakdown Voltage

1.2 kV 1.2 kV

Id - Continuous Drain Current

45 A 45 A

Rds On - Drain-Source Resistance

80 mOhms 80 mOhms

Vgs - Gate-Source Voltage

- 10 V , + 25 V - 10 V , + 25 V

Vgs th - Gate-Source Threshold Voltage

3.5 V 3.5 V

Qg - Gate Charge

105 nC 105 nC

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 200 C + 200 C

Pd - Power Dissipation

270 W 270 W

Channel Mode

Enhancement Enhancement

Tradename

HiP247 HiP247

Package / Case

HIP - 247 - 3 HIP - 247 - 3

Hts Code

8541290095 8541290095

Notes:- Show Stocked Products With Similar Attributes.

SCT30N120 Alternative Parts

We are delighted to provide the SCT30N120 from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SCT30N120 and other electronic components in the SiC MOSFETs category and beyond.

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Additional Infomation About Product

The SCT30N120 is a high voltage Insulated Gate Bipolar Transistor (IGBT) produced by STMicroelectronics. It is a 30A IGBT, with an enhanced CEO buffer structure and an operating voltage of up to 1200V. This makes it suited for applications such as motor drive, welding, and UPS power supply. The device has an improved dv/dt capability for surge current applications, and low collector-emitter saturation voltage for improved efficiency. The significantly improved turn-off performance of the integrated MOSFET can reduce switching losses, making the SCT30N120 ideal for power conversion applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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