Product Information

SM4T23AY

SM4T23AY electronic component of STMicroelectronics

Datasheet
STMicroelectronics TVS Diodes - Transient Voltage Suppressors 400 W 2.3kW Transil 5V to 70V Uni

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4096 ea
Line Total: USD 0.41

84 - Global Stock
Ships to you between
Mon. 20 May to Thu. 23 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
84 - WHS 1


Ships to you between
Mon. 20 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

SM4T23AY
STMicroelectronics

1 : USD 0.5096
10 : USD 0.415
30 : USD 0.3748
100 : USD 0.3244

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Polarity
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Package / Case
Qualification
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Voltage
Peak Surge Current
Brand
Mounting Style
Peak Pulse Power Dissipation
Factory Pack Quantity :
Tradename
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Subcategory
Taric
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SM4TY Automotive 400 W Transil Datasheet - production data Complies with the following standards ISO 10605, C = 150 pF, R = 330 : A 30 kV (air discharge) 30 kV (contact discharge) ISO 10605, C = 330 pF, R = 330 : K 30 kV (air discharge) Unidirectional Bidirectional 30 kV (contact discharge) (a) ISO 7637-2 SMA pulse 1: V = -100 V (JEDEC DO-214AC) S pulse 2a: V = +50 V S pulse 3a: V = -150 V S pulse 3b: V = +100 V S Features Description Peak pulse power: The SM4TY Transil series has been designed to 400 W (10/1000 s) protect sensitive automotive circuits against surges defined in ISO 7637-2 and against 2.3 kW (8/20 s) electrostatic discharges according to ISO 10605. Stand-off voltage range: from 5 V to 70 V The planar technology makes it compatible with Unidirectional and bidirectional types high-end circuits where low leakage current and Low leakage current: high junction temperature are required to provide 0.2 A at 25 C reliability and stability over time. SM4TY devices 1 A at 85 C are packaged in SMA (SMA footprint in accordance with IPC 7531 standard). Operating T : 150 C j max High power capability at T : jmax 270 W (10/1000 s) JEDEC registered package outline Resin meets UL 94, V0 AEC-Q101 qualified TM: Transil is a trademark of STMicroelectronics a. Not applicable to parts with stand-off voltage lower than the average battery voltage (13.5 V) October 2015 DocID17862 Rev 4 1/12 This is information on a product in full production. www.st.com Prerelease product(s)Characteristics SM4TY 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit ISO 10605 (C = 150 pF, R = 330 ) Contact discharge 30 Air discharge 30 V Peak pulse voltage kV PP ISO 10605, C = 330 pF, R = 330 : Contact discharge 30 Air discharge 30 (1) Peak pulse power dissipation T = T 400 W PPP j initial amb T Storage temperature range -65 to + 150 C stg T Operating junction temperature range -55 to + 150 C j T Maximum lead temperature for soldering during 10 s. 260 C L 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Figure 1. Electrical characteristics - definitions II II Symbol Parameter II II FF PPPP Unidirectional V Stand-off voltage RM V Breakdown voltage BR V Clamping voltage CL II RR VV VV VV VV FF VV CLCL BRBR RMRM VV VV VV VV I Leakage current V CLCL BRBR RMRM II RM RM RMRM II I Peak pulse current RMRM II PP RMRM VV VV VV RMRM BRBR CLCL II II RR RR T Voltage temperature coefficient V Forward voltage drop F Bidirectional R Dynamic resistance D II PPPP II PPPP Figure 2. Pulse definition for electrical characteristics %IPP 100 Pulse waveform 50 tr = rise time (s) tp = pulse duration time (s) 0 t t t r p 2/12 DocID17862 Rev 4 Prerelease product(s)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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