SMA661AS Fully integrated GPS LNA IC Features Power down function Integrated matching networks Low noise figure 1.15 dB 1.575 GHz High gain 18 dB 1.575 GHz High linearity (IIP3 = +3 dBm) Temperature compensated SOT666 Unconditionally stable (1.65 x 1.2 x 0.57 mm) ESD protection (HBM 2 kV) 70 GHz Silicon Germanium technology Applications The SMA661AS, using the ST s leading-edge GPS 70 GHz SiGe BiCMOS technology, achieves excellent RF performance at the GPS frequency of Description 1.575 GHz, in terms of power gain, noise Figure and linearity with a current consumption of The SMA661AS is the first low-noise amplifier 8.5 mA. with integrated matching networks and embedded The device is unconditionally stable and ESD power-down function. The chip, which requires protected. All these features are steady over the only one external input capacitor, drastically o o operating temperature range of -40 C to +85 C. reduces the application bill of materials and the It s housed in ultra-miniature SOT666 plastic PCB area, resulting in an ideal solution for package. compact and cost-effective GPS LNA. Table 1. Device summary Order code Marking Package Packing SMA661ASTR 661 SOT666 Tape and reel September 2013 Rev 6 1/14 www.st.com 14Contents SMA661AS Contents 1 Pins description and circuit schematic 3 2 Electrical specifications 4 2.1 Absolute maximum ratings . 4 2.2 Electrical characteristics . 4 3 Typical performance . 5 4 Evaluation board description 8 5 Package and packing informations 10 5.1 Package informations 10 5.2 Packing informations .11 6 Revision history . 13 2/14