SMA661ASTR STMicroelectronics

SMA661AS Fully integrated GPS LNA IC Features Power down function Integrated matching networks Low noise figure 1.15 dB 1.575 GHz High gain 18 dB 1.575 GHz High linearity (IIP3 = +3 dBm) Temperature compensated SOT666 Unconditionally stable (1.65 x 1.2 x 0.57 mm) ESD protection (HBM 2 kV) 70 GHz Silicon Germanium technology Applications The SMA661AS, using the ST s leading-edge GPS 70 GHz SiGe BiCMOS technology, achieves excellent RF performance at the GPS frequency of Description 1.575 GHz, in terms of power gain, noise Figure and linearity with a current consumption of The SMA661AS is the first low-noise amplifier 8.5 mA. with integrated matching networks and embedded The device is unconditionally stable and ESD power-down function. The chip, which requires protected. All these features are steady over the only one external input capacitor, drastically o o operating temperature range of -40 C to +85 C. reduces the application bill of materials and the It s housed in ultra-miniature SOT666 plastic PCB area, resulting in an ideal solution for package. compact and cost-effective GPS LNA. Table 1. Device summary Order code Marking Package Packing SMA661ASTR 661 SOT666 Tape and reel September 2013 Rev 6 1/14 www.st.com 14Contents SMA661AS Contents 1 Pins description and circuit schematic 3 2 Electrical specifications 4 2.1 Absolute maximum ratings . 4 2.2 Electrical characteristics . 4 3 Typical performance . 5 4 Evaluation board description 8 5 Package and packing informations 10 5.1 Package informations 10 5.2 Packing informations .11 6 Revision history . 13 2/14