Product Information

SMA6F14AY

SMA6F14AY electronic component of STMicroelectronics

Datasheet
ESD Suppressors / TVS Diodes DFD PROTECTION

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.0276 ea
Line Total: USD 0.0276

1 - Global Stock
Ships to you between
Thu. 04 Apr to Wed. 10 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1745 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 1
Multiples : 1

Stock Image

SMA6F14AY
STMicroelectronics

1 : USD 0.2252
10 : USD 0.1632
100 : USD 0.1533
500 : USD 0.1477
1000 : USD 0.1449
2500 : USD 0.1423
10000 : USD 0.1394
20000 : USD 0.1394
50000 : USD 0.1394

1 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 1
Multiples : 1

Stock Image

SMA6F14AY
STMicroelectronics

1 : USD 0.0276

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Pppm - Peak Pulse Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Subcategory
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SMA6FxxAY Datasheet Automotive 600 W TVS in SMA Flat Features AEC-Q101 qualified Peak pulse power: 600 W (10/1000 s) and 4 kW (8/20 s) Flat and thin package: 1 mm Stand-off voltage range from 5 V to 188 V Unidirectional type Low leakage current: 0.2 A at 25 C and 1 A at 85 C Operating T max: 175 C j High power capability at T max.: up to 400 W (10/1000 s) j Lead finishing: matte tin plating Complies with the following standards UL94, V0 J-STD-020 MSL level 1 J-STD-002, JESD 22-B102 E3 and MIL-STD-750, method 2026 JESD-201 class 2 whisker test IPC7531 footprint and JEDEC registered package outline IEC 61000-4-4 level 4: 4 kV Product status link ISO10605, IEC 61000-4-2, C = 150 pF - R = 330 exceeds level 4: 30 kV (contact discharge) SMA6F5.0AY, SMA6F6.0AY, SMA6F6.5AY, SMA6F8.5AY, 30 kV (air discharge) SMA6F10AY, SMA6F11AY, ISO10605, C = 330 pF, R = 330 exceeds level 4: SMA6F12AY, SMA6F13AY, SMA6F14AY, SMA6F15AY, 30 kV (contact discharge) SMA6F16AY, SMA6F18AY, 30 kV (air discharge) SMA6F20AY, SMA6F22AY, ISO7637-2 (Not applicable to parts with V lower than battery voltage) SMA6F23AY, SMA6F24AY, RM SMA6FY SMA6F26AY, SMA6F28AY, Pulse 1: V = -150 V S SMA6F30AY, SMA6F31AY, SMA6F33AY, SMA6F36AY, Pulse 2a: V = +112 V S SMA6F40AY, SMA6F48AY, Pulse 3a: V = -220 V S SMA6F58AY, SMA6F64AY, SMA6F70AY, SMA6F85AY, Pulse 3b: V = +150 V S SMA6F100AY, SMA6F130AY, SMA6F154AY, SMA6F170AY, SMA6F188AY Description The SMA6FY Transil series are designed to protect sensitive automotive circuits against surges defined in ISO 7637 series and against electrostatic discharges according to ISO 10605. The Planar technology makes it compatible with high-end circuits where low leakage current and high junction temperature are required to provide long term reliability and stability. DS12477 - Rev 3 - January 2020 www.st.com For further information contact your local STMicroelectronics sales office.SMA6FxxAY Characteristics 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit ISO10605 (C = 330 pF, R = 330 ): Contact discharge 30 Air discharge 30 V Peak pulse voltage kV PP ISO10605 / IEC 61000-4-2 (C = 150 pF, R = 330 ) Contact discharge 30 Air discharge 30 P 10/1000 s, T initial = T Peak pulse power dissipation 600 W PP j amb T Storage temperature range -65 to +175 C stg T Operating junction temperature range -55 to +175 C j T Maximum lead temperature for soldering during 10 s 260 C L Figure 1. Electrical characteristics - parameter definitions Figure 2. Pulse definition for electrical characteristics DS12477 - Rev 3 page 2/15

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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