STB26N60M2 STMicroelectronics

STB26N60M2 N-channel 600 V, 0.14 typ., 20 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features V R DS DS(on) TAB Order code ID PTOT T max. Jmax 20 169 STB26N60M2 650 V 0.165 A W 2 3 1 Extremely low gate charge Excellent output capacitance (C ) profile OSS D 100% avalanche tested PAK Zener-protected Applications Figure 1: Internal schematic diagram Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Table 1: Device summary Order code Marking Package Packing STB26N60M2 26N60M2 DPAK Tape and reel March 2017 DocID030419 Rev 1 1/15 www.st.com This is information on a product in full production. Contents STB26N60M2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK package information .............................................................. 9 4.2 DPAK packing information ............................................................. 12 5 Revision history ............................................................................ 14 2/15 DocID030419 Rev 1