STEVAL-ISA015V2 STMicroelectronics

4 3 2 1 STC04IE170HV Monolithic emitter switched bipolar transistor ESBT 1700 V - 4 A - 0.17 Features V I R CS(ON) C CS(ON) 0.7 V 4 A 0.17 High voltage / high current cascode configuration Low equivalent ON resistance TO247-4L HV Very fast-switch: up to 150 kHz Squared RBSOA: up to 1700 V Very low C driven by R = 47 ISS G Very low turn-off cross over time Figure 1. Internal schematic diagrams Application Aux SMPS for three-phase mains Description The STC04IE170HV is manufactured in monolithic ESBT technology, aimed at providing the best performance in high frequency / high voltage applications. It is designed for use in gate driven based topologies. Table 1. Device summary Order code Marking Package Packing STC04IE170HV C04IE170HV TO247-4L HV Tube June 2009 Doc ID 12676 Rev 3 1/9 www.st.com 9 Electrical ratings STC04IE170HV 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-source voltage (V = V = 0) 1700 V CS(SS) BS GS V Base-source voltage (I = 0, V = 0) 30 V BS(OS) C GS V Source-base voltage (I = 0, V = 0) 17 V SB(OS) C GS V Gate-source voltage 17 V GS I Collector current 4 A C I Collector peak current (t < 5 ms) 8 A CM P I Base current 4 A B I Base peak current (t < 1 ms) 8 A BM P P Total dissipation at T 25 C 178 W tot c T Storage temperature -40 to 150 C stg T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.7 C/W thJC 2/9 Doc ID 12676 Rev 3