STF150N10F7 STMicroelectronics

STF150N10F7 N-channel 100 V, 0.0036 typ., 65 A, STripFET F7 Power MOSFET in a TO-220FP package Datasheet production data Features Order code V R I P DS DS(on)max D TOT STF150N10F7 100 V 0.0042 65 A 35 W Among the lowest R on the market DS(on) Excellent figure of merit (FoM) 3 2 Low C /C ratio for EMI immunity rss iss 1 High avalanche ruggedness TO-220FP Applications Switching applications Figure 1. Internal schematic diagram Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more * efficient switching. 6 0 Y Table 1. Device summary Order code Marking Package Packaging STF150N10F7 150N10F7 TO-220FP Tube August 2014 DocID025818 Rev 2 1/13 This is information on a product in full production. www.st.comContents STF150N10F7 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 12 2/13 DocID025818 Rev 2