STF45N10F7 STMicroelectronics

STF45N10F7 N-channel 100 V, 0.0145 typ., 30 A, STripFET VII DeepGATE Power MOSFET in a TO-220FP package Datasheet - production data Features R DS(on) Order code V I P DS (1) D TOT max. STF45N10F7 100 V 0.018 30 A 25 W 1. VGS = 10 V Ultra low on-resistance 3 2 100% avalanche tested 1 TO-220FP Applications Switching applications Description Figure 1. Internal schematic diagram th This device utilizes the 7 generation of design rules of STs proprietary STripFET technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R in all DS(on) packages. * 6 0 Y Table 1. Device summary Order codes Marking Package Packaging STF45N10F7 45N10F7 TO-220FP Tube November 2013 DocID024005 Rev 3 1/13 This is information on a product in full production. www.st.comContents STF45N10F7 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 12 2/13 DocID024005 Rev 3