Product Information

STGWA40IH65DF

STGWA40IH65DF electronic component of STMicroelectronics

Datasheet
IGBT Transistors Trench gate field-stop 650 V, 40 A, soft-switching IH series IGBT in a TO-247 long leads package
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 8.343 ea
Line Total: USD 8.34

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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Availability Price Quantity
0 - Warehouse 1


Ships to you between Fri. 10 May to Tue. 14 May

MOQ : 1
Multiples : 1

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STGWA40IH65DF
STMicroelectronics

1 : USD 8.343
10 : USD 3.0024
25 : USD 2.8404
100 : USD 2.4624
600 : USD 2.0952
1200 : USD 1.9008

Read More Specifications

     
Manufacturer
Product Category
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Product Type
Factory Pack Quantity :
Subcategory
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Additional Infomation About Product

STGWA40IH65DF Datasheet Trench gate field-stop 650 V, 40 A, soft-switching IH series IGBT in a TO247 long leads package Features Designed for soft commutation only Maximum junction temperature: T = 175 C J V = 1.5 V (typ.) I = 40 A CE(sat) C Minimized tail current Tight parameter distribution Low thermal resistance Low drop voltage freewheeling co-packaged diode C(2, TAB) Positive V temperature coefficient CE(sat) Applications G(1) Induction heating Resonant converters Microwave ovens E(3) NG1E3C2T Description The newest IGBT 650 V soft-switching IH series has been developed using an advanced proprietary trench gate field-stop structure, whose performance is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low drop forward voltage is included. The result is a product specifically designed to maximize efficiency for any resonant and soft- Product status link switching applications. STGWA40IH65DF Product summary Order code STGWA40IH65DF Marking G40IH65DF Package TO-247 long leads Packing Tube DS11801 - Rev 3 - September 2018 www.st.com For further information contact your local STMicroelectronics sales office.STGWA40IH65DF Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 650 V CES GE Continuous collector current at T = 25 C 80 C I A C Continuous collector current at T = 100 C 40 C (1) I Pulsed collector current 120 A CP V Gate-emitter voltage 20 V GE Continuous forward current at T = 25 C 40 C I F Continuous forward current at T = 100 C 20 A C (1) I Pulsed forward current 120 FP P Total power dissipation at T = 25 C 238 W TOT C T Storage temperature range - 55 to 150 STG C T Operating junction temperature range - 55 to 175 J 1. Pulse width limited by maximum junction temperature. Table 2. Thermal data Symbol Parameter Value Unit Thermal resistance junction-case IGBT 0.63 R thJC Thermal resistance junction-case diode 2.08 C/W R Thermal resistance junction-ambient 50 thJA DS11801 - Rev 3 page 2/15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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