STGWA40IH65DF STMicroelectronics

STGWA40IH65DF electronic component of STMicroelectronics
STGWA40IH65DF STMicroelectronics
STGWA40IH65DF IGBT Transistors
STGWA40IH65DF  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of STGWA40IH65DF IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. STGWA40IH65DF IGBT Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

Part No.STGWA40IH65DF
Manufacturer:STMicroelectronics
Category:IGBT Transistors
Description:IGBT Transistors Trench gate field-stop 650 V, 40 A, soft-switching IH series IGBT in a TO-247 long leads package
Datasheet:STGWA40IH65DF Datasheet (PDF)
Shipping Charges:Click here for details
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Price (USD)
  
1: USD 9.27 ea
Line Total: USD 9.27 
Availability : 0
  
QtyUnit Price
1$ 9.27
10$ 3.336
25$ 3.156
100$ 2.736
600$ 2.328
1200$ 2.112
  

Availability0
Ship by Fri. 19 Jun to Tue. 23 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 9.27
10$ 3.336
25$ 3.156
100$ 2.736
600$ 2.328
1200$ 2.112

   
Manufacturer
Product Category
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STGWA40IH65DF from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STGWA40IH65DF and other electronic components in the IGBT Transistors category and beyond.

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STGWA40IH65DF Datasheet Trench gate field-stop 650 V, 40 A, soft-switching IH series IGBT in a TO247 long leads package Features Designed for soft commutation only Maximum junction temperature: T = 175 C J V = 1.5 V (typ.) I = 40 A CE(sat) C Minimized tail current Tight parameter distribution Low thermal resistance Low drop voltage freewheeling co-packaged diode C(2, TAB) Positive V temperature coefficient CE(sat) Applications G(1) Induction heating Resonant converters Microwave ovens E(3) NG1E3C2T Description The newest IGBT 650 V soft-switching IH series has been developed using an advanced proprietary trench gate field-stop structure, whose performance is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low drop forward voltage is included. The result is a product specifically designed to maximize efficiency for any resonant and soft- Product status link switching applications. STGWA40IH65DF Product summary Order code STGWA40IH65DF Marking G40IH65DF Package TO-247 long leads Packing Tube DS11801 - Rev 3 - September 2018 www.st.com For further information contact your local STMicroelectronics sales office.STGWA40IH65DF Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 650 V CES GE Continuous collector current at T = 25 C 80 C I A C Continuous collector current at T = 100 C 40 C (1) I Pulsed collector current 120 A CP V Gate-emitter voltage 20 V GE Continuous forward current at T = 25 C 40 C I F Continuous forward current at T = 100 C 20 A C (1) I Pulsed forward current 120 FP P Total power dissipation at T = 25 C 238 W TOT C T Storage temperature range - 55 to 150 STG C T Operating junction temperature range - 55 to 175 J 1. Pulse width limited by maximum junction temperature. Table 2. Thermal data Symbol Parameter Value Unit Thermal resistance junction-case IGBT 0.63 R thJC Thermal resistance junction-case diode 2.08 C/W R Thermal resistance junction-ambient 50 thJA DS11801 - Rev 3 page 2/15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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