Product Information

STIEC45-26AS

STIEC45-26AS electronic component of STMicroelectronics

Datasheet
TVS Diodes - Transient Voltage Suppressors Transil IEC 61000 500A 24V to 33V
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 1.2015 ea
Line Total: USD 3003.75

0 - Global Stock
MOQ: 2500  Multiples: 2500
Pack Size: 2500

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 2500
Multiples : 2500

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STIEC45-26AS
STMicroelectronics

2500 : USD 2.8266
5000 : USD 2.8022
10000 : USD 2.7776
15000 : USD 2.753
20000 : USD 2.7285
25000 : USD 2.7036
30000 : USD 2.6789
50000 : USD 2.6539
100000 : USD 2.629

0 - WHS 2


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

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STIEC45-26AS
STMicroelectronics

1 : USD 6.4726
10 : USD 2.3301
25 : USD 2.2059

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Polarity
Termination Style
Clamping Voltage
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Peak Surge Current
Dimensions
Brand
Mounting Style
Factory Pack Quantity :
Tradename
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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Additional Infomation About Product

STIEC45-xxAS, STIEC45-xxACS Transil TVS for IEC 61000-4-5 compliance Datasheet - production data MIL STD 883G, method 3015-7 Class 3B 25 kV HBM (human body model) Resin meets UL 94, V0 MIL-STD-750, method 2026 solderability EIA-481 and IEC 60286-3 packing IPC 7531 footprint Description The STIEC45 Transil series has been designed to protect DC power supply lines according to IEC 61000-4-5. This device protects circuits against electrical fast transients (EFT) according to IEC 61000-4-4 and ETS EN 300 386. Protection against electrostatic discharges is Features provided according to IEC 61000-4-2 and MIL Peak pulse current: 500 A (1.2/50 s, STD 883 Method 3015. 8/20 s) Stand-off voltage range: from 24 V to 33 V Planar technology makes these devices suitable Unidirectional types: STIEC45-xxAS for high-end equipment and SMPS where low Reverse: Clamping starts at VBR leakage current and high junction temperature are required to provide reliability and stability Forward: Clamping starts around 0.6 V over time. Bidirectional types: STIEC45-xxACS Clamping starts at V on both BR The STIEC45 device is packaged in SMC (SMC directions footprint in accordance with IPC 7351 standard). Low leakage current Transil is a trademark of STMicroelectronics 0.2 A at 25 C 1 A at 85 C Table 1: Device summary Operating Tj max: 150 C Order codes VRM Order codes High peak current capability at Tj max: unidirectional (V) bidirectional 410 A, 8/20 s STIEC45-24AS 24 STIEC45-24ACS JEDEC registered package outline STIEC45-26AS 26 STIEC45-26ACS RoHS2 compliant STIEC45-28AS 28 STIEC45-28ACS Complies with the following standards STIEC45-30AS 30 STIEC45-30ACS IEC 61000-4-2 level 4 STIEC45-33AS 33 STIEC45-33ACS 15 kV (air discharge) 8 kV (contact discharge) IEC 61000-4-5 Level 4: 4 kV with R = 12 (334 A) common mode Level 2: 1 kV with R = 2 (500 A) differential mode November 2017 DocID16871 Rev 3 1/11 www.st.com This is information on a product in full production. Characteristics STIEC45-xxAS, STIEC45-xxACS 1 Characteristics Table 2: Absolute maximum ratings (limiting values at Tamb = 25 C unless otherwise specified) Symbol Parameter Value Unit Ipp Peak pulse current (8/20 s) Tj initial = Tamb 500 A T Storage temperature range -65 to +150 C stg Tj Operating junction temperature range -55 to +150 C T Maximum lead temperature for soldering during 10 s. 260 C L Table 3: Thermal resistances Symbol Parameter Value Unit R Junction to leads 15 C/W th(j-l) R Junction to ambient on printed circuit on recommended pad layout 90 C/W th(j-a) Figure 1: Electrical characteristics (definitions) II II Symbol Parameter II II PPPP FF Unidirectional V Stand-off voltage RM V Breakdown voltage at I BR R V Clamping voltage CL II RR VV VV VV VV FF VV VV VV VV CCLL BBRR RRMM VV I Leakage current at V CCLL BBRR RRMM II RM RM RRMM II RRMM II I Peak pulse current PP RRMM VV VV VV RRMM BBRR CCLL II RR II RR T Voltage temperature coefficient I V Forward voltage drop at F F Bidirectional R Dynamic resistance D II PPPP II PPPP Table 4: Electrical characteristics (Tamb = 25 C) (2) (3) V at I 1.2/50 R CL PP D (1) (4) IRM at VRM VBR at IR T s - 8/20 s 8/20 s Order code 25 C 85 C Min. Typ. Max. Max. Typ. Max. A V V mA V A 10-4/ C STIEC45-24AS/ACS 0.2 1 24 26.7 28.2 29.5 1 42 500 0.025 9.6 STIEC45-26AS/ACS 0.2 1 26 28.9 30.3 31.9 1 45 500 0.026 9.7 STIEC45-28AS/ACS 0.2 1 28 31.1 32.6 34.3 1 49 500 0.029 9.8 STIEC45-30AS/ACS 0.2 1 30 33.3 35 36.8 1 55 500 0.036 9.9 STIEC45-33AS/ACS 0.2 1 33 36.7 38.6 40.6 1 59 500 0.036 10 Notes: (1) Pulse test : tp < 50 ms. (2) Surge capability given for both directions (unidirectional and bidirectional types). (3) To calculate maximum clamping voltage at other surge levels: V max = R x I + V max CL D PP BR (4) To calculate VBR versus junction temperature: VBR at Tj = VBR at 25 C x (1 + T x (Tj 25)) 2/11 DocID16871 Rev 3

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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