Product Information

STL225N6F7AG

STL225N6F7AG electronic component of STMicroelectronics

Datasheet
MOSFET Automotive 60V N-Ch 12mOhm 120A F7 Power
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 7.187 ea
Line Total: USD 7.19

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 3000
Multiples : 3000

Stock Image

STL225N6F7AG
STMicroelectronics

3000 : USD 2.1152

0 - WHS 2


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

STL225N6F7AG
STMicroelectronics

1 : USD 7.56
10 : USD 2.7256
25 : USD 2.5764
100 : USD 2.1984
500 : USD 1.8005
1000 : USD 1.4921
3000 : USD 1.4324

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

STL225N6F7AG Automotive-grade N-channel 60 V, 1.2 m typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V R max I DS DS(on) D STL225N6F7AG 60 V 1.4 m 120 A AEC-Q101 qualified Among the lowest R on the market DS(on) Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Wettable flank package Applications DC-DC converter for H.E.V. Figure 1: Internal schematic diagram (hybrid electric vehicle) Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packaging TM STL225N6F7AG 225N6F7 PowerFLAT 5x6 Tape and reel March 2017 DocID028557 Rev 3 1/15 www.st.com This is information on a product in full production. Contents STL225N6F7AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package mechanical data ............................................................... 9 4.1 PowerFLAT 5x6 package mechanical data ....................................... 9 4.2 Packing information ......................................................................... 12 5 Revision history ............................................................................ 14 2/15 DocID028557 Rev 3

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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