Product Information

STP03D200

STP03D200 electronic component of STMicroelectronics

Datasheet
Transistors Darlington 2kV NPN Darlington trans
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

50: USD 6.305 ea
Line Total: USD 315.25

48 - Global Stock
Ships to you between
Fri. 03 May to Thu. 09 May
MOQ: 50  Multiples: 50
Pack Size: 50

 More Buying Options & Price Grid(s)

Availability Price Quantity
48 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 50
Multiples : 50

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STP03D200
STMicroelectronics

50 : USD 6.305
100 : USD 6.305
150 : USD 6.305
200 : USD 6.305
250 : USD 6.305

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector- Base Voltage VCBO
Maximum DC Collector Current
Maximum Collector Cut-off Current
Mounting Style
Package / Case
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Dc Current Gain Hfe Max
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

STP03D200 2 kV NPN Darlington transistor Features Extra high voltage capability TAB High gain characteristic Application Active start-up network in 3 phase S.M.P.S. 3 (see application note AN2454) 2 1 TO-220 Description The STP03D200 is made by two extra high voltage NPN transistors in Darlington configuration housed in a single package. The resulting device shows high gain performance. Figure 1. Internal schematic diagram (2, TAB) C B (1) SC09020 E (3) Table 1. Device summary Order code Marking Package Packaging STP03D200 P03D200 TO-220 Tube February 2010 Doc ID 14059 Rev 2 1/7 www.st.com 7Electrical ratings STP03D200 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-base voltage (I = 0) 2000 V CBO E V Collector-emitter voltage (I = 0) 1200 V CEO B V Emitter-base voltage (I = 0) 20 V EBO C I Collector current 100 mA C I Collector peak current (t < 5 ms) 200 mA CM P P Total dissipation at T = 25 C 40 W TOT c T Storage temperature -65 to 150 C STG T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 3.13 C/W thJC 2/7 Doc ID 14059 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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