STP14NF10 STMicroelectronics

STP14NF10 N-channel 100 V - 0.115 - 15 A - TO-220 low gate charge STripFET II Power MOSFET Features Type V R max I DSS DS(on) D STP14NF10 100 V < 0.13 15 A Exceptional dv/dt capability 3 100% avalanche tested 2 1 Application oriented characterization TO-220 Application Switching applications Description This Power MOSFET series realized with Figure 1. Internal schematic diagram STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high- efficiency, high-frequency isolated DC-DC converters for telecom and computer applications. It is also intended for any applications with low gate drive requirements. Table 1. Device summary Order code Marking Package Packaging STP14NF10 P14NF10 TO-220 Tube April 2008 Rev 4 1/12 www.st.com 12Contents STP14NF10 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/12