STD27N3LH5, STP27N3LH5 STU27N3LH5 N-channel 30 V, 0.014 , 27 A, DPAK, IPAK, TO-220 STripFET V Power MOSFET Features Type V R max I DSS DS(on) D 3 3 STD27N3LH5 30 V 0.019 27 A 1 2 1 STP27N3LH5 30 V 0.020 27 A IPAK DPAK STU27N3LH5 30 V 0.020 27 A R * Q industry benchmark DS(on) g Extremely low on-resistance R DS(on) Very low switching gate charge 3 High avalanche ruggedness 2 1 TO-220 Low gate drive power losses Application Figure 1. Internal schematic diagram Switching applications D (TAB or 2) Description This STripFETV Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit (FOM). G (1) S (3) sc08440 Table 1. Device summary Order codes Marking Package Packaging STD27N3LH5 27N3LH5 DPAK Tape and reel STU27N3LH5 27N3LH5 IPAK Tube STP27N3LH5 27N3LH5 TO-220 Tube March 2011 Doc ID 15617 Rev 3 1/21 www.st.com 21 Contents STD27N3LH5, STP27N3LH5, STU27N3LH5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 9 4 Package mechanical data 11 5 Packaging mechanical data 18 6 Revision history . 20 2/21 Doc ID 15617 Rev 3