STP5N105K5 STMicroelectronics

STP5N105K5 N-channel 1050 V, 2.9 typ., 3 A MDmesh K5 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STP5N105K5 1050 V 3.5 3 A 85 W Worldwide best FOM (figure of merit) Ultra low gate charge 100% avalanche tested Zener-protected Applications Switching applications Figure 1: Internal schematic diagram Description D(2, TAB) This N-channel Zener-protected Power MOSFET is designed using STs revolutionary avalanche- rugged very high voltage MDmesh K5 technology, based on an innovative proprietary vertical structure. The result is a dramatic G(1) reduction in on-resistance, and ultra-low gate charge for applications which require superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packaging STP5N105K5 5N105K5 TO-220 Tube S(3) AM01476v1 October 2014 DocID026703 Rev 3 1/14 www.st.com This is information on a product in full production. Contents STP5N105K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package mechanical data ............................................................. 10 4.1 TO-220 package mechanical data .................................................. 11 5 Revision history ............................................................................ 13 2/14 DocID026703 Rev 3