STP62NS04Z STMicroelectronics

STP62NS04Z N-channel clamped 12.5 m, 62 A, TO-220 fully protected MESH OVERLAY Power MOSFET Features R DS(on) Type V I DSS D max STP62NS04Z Clamped < 0.015 62 A 3 100% avalanche tested 2 1 Low capacitance and gate charge TO-220 175 C maximum junction temperature Application Switching applications Figure 1. Internal schematic diagram Description D(2) Fully clamped MOSFET is produced by using ST s most advanced MESH OVERLAY process based on strip layout. The inherent benefits of this new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operating conditions such as G(1) those encountered in the automotive environment. It is also recommended for any other application requiring extra ruggedness. S(3) SC12470 Table 1. Device summary Order code Marking Package Packaging STP62NS04Z P62NS04Z TO-220 Tube May 2009 Doc ID 9859 Rev 6 1/12 www.st.com 12 Contents STP62NS04Z Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/12 Doc ID 9859 Rev 6