Product Information

STP6N95K5

STP6N95K5 electronic component of STMicroelectronics

Datasheet
Transistor: N-MOSFET; unipolar; 950V; 6A; 90W; TO220-3

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.3608 ea
Line Total: USD 1.36

1 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

STP6N95K5
STMicroelectronics

1 : USD 1.3608

625 - WHS 2


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1

Stock Image

STP6N95K5
STMicroelectronics

1 : USD 1.8481
10 : USD 1.6879
30 : USD 1.5869
100 : USD 1.482
500 : USD 1.4366
1000 : USD 1.4148

171 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

STP6N95K5
STMicroelectronics

1 : USD 2.665
3 : USD 2.392
9 : USD 1.911
24 : USD 1.807
250 : USD 1.768

     
Manufacturer
Product Category
Technology
Kind Of Package
Mounting
Case
Polarisation
Features Of Semiconductor Devices
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Power Dissipation
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STD6N95K5, STP6N95K5 STU6N95K5, STW6N95K5 Datasheet N-channel 950 V, 1 typ., 9 A MDmesh K5 Power MOSFETs in DPAK, TO-220, IPAK and TO-247 packages Features TAB TAB Order codes V R max. I P DS DS(on) D TOT 3 1 DPAK STD6N95K5 3 TO-220 STP6N95K5 2 1 950 V 1.25 9 A 90 W TAB STU6N95K5 STW6N95K5 DPAK 950 V worldwide best R DS(on) 3 2 IPAK 1 3 Worldwide best FOM (figure of merit) 2 TO-247 1 Ultra low gate charge 100% avalanche tested D(2, TAB) Zener-protected G(1) Applications Switching applications Description S(3) AM01475V1 These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STD6N95K5 STP6N95K5 STU6N95K5 STW6N95K5 DS6666 - Rev 5 - March 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate- source voltage 30 V GS I Drain current (continuous) at T = 25 C 9 A D C I Drain current (continuous) at T = 100 C 6 A D C (1) I Drain current (pulsed) 24 A DM P Total dissipation at T = 25 C 90 W TOT C (2) I Max current during repetitive or single pulse avalanche 3 A AR Single pulse avalanche energy E 90 mJ AS (starting T = 25 C, I =I , V = 50 V) J D AS DD (3) dv/dt Peak diode recovery voltage slope 4.5 V/ns (4) dv/dt MOSFET dv/dt ruggedness 50 V/ns T Operating junction temperature range j - 55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. Pulse width limited by T Jmax. 3. I 9 A, di/dt 100 A/s, V V SD DS(peak) (BR)DSS 4. V 760 V DS Table 2. Thermal data Value Symbol Parameter Unit TO-220, DPAK TO-247 IPAK R Thermal resistance junction-case 1.39 C/W thj-case R Thermal resistance junction-amb 62.5 50 C/W thj-amb (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on 1 inch FR-4 board, 2 oz Cu DS6666 - Rev 5 page 2/26

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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