STP6N95K5 STMicroelectronics

STP6N95K5 electronic component of STMicroelectronics
STP6N95K5 STMicroelectronics
STP6N95K5 MOSFETs
STP6N95K5  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of STP6N95K5 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STP6N95K5 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. STP6N95K5
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 950V; 6A; 90W; TO220-3
Datasheet: STP6N95K5 Datasheet (PDF)
Price (USD)
1: USD 3.6954 ea
Line Total: USD 3.7 
Availability : 43
  
Ship by Fri. 26 Sep to Thu. 02 Oct
QtyUnit Price
1$ 3.6954
10$ 2.554
30$ 2.1757
100$ 2.0508
500$ 1.9949
1000$ 1.9706

Availability 29
Ship by Wed. 24 Sep to Fri. 26 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.108
3$ 2.8
9$ 2.24
24$ 2.128
250$ 2.072


Availability 43
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.6954
10$ 2.554
30$ 2.1757
100$ 2.0508
500$ 1.9949
1000$ 1.9706

   
Manufacturer
Product Category
Technology
Kind Of Package
Mounting
Case
Polarisation
Features Of Semiconductor Devices
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STP6N95K5 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STP6N95K5 and other electronic components in the MOSFETs category and beyond.

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STD6N95K5, STP6N95K5 STU6N95K5, STW6N95K5 Datasheet N-channel 950 V, 1 typ., 9 A MDmesh K5 Power MOSFETs in DPAK, TO-220, IPAK and TO-247 packages Features TAB TAB Order codes V R max. I P DS DS(on) D TOT 3 1 DPAK STD6N95K5 3 TO-220 STP6N95K5 2 1 950 V 1.25 9 A 90 W TAB STU6N95K5 STW6N95K5 DPAK 950 V worldwide best R DS(on) 3 2 IPAK 1 3 Worldwide best FOM (figure of merit) 2 TO-247 1 Ultra low gate charge 100% avalanche tested D(2, TAB) Zener-protected G(1) Applications Switching applications Description S(3) AM01475V1 These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STD6N95K5 STP6N95K5 STU6N95K5 STW6N95K5 DS6666 - Rev 5 - March 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate- source voltage 30 V GS I Drain current (continuous) at T = 25 C 9 A D C I Drain current (continuous) at T = 100 C 6 A D C (1) I Drain current (pulsed) 24 A DM P Total dissipation at T = 25 C 90 W TOT C (2) I Max current during repetitive or single pulse avalanche 3 A AR Single pulse avalanche energy E 90 mJ AS (starting T = 25 C, I =I , V = 50 V) J D AS DD (3) dv/dt Peak diode recovery voltage slope 4.5 V/ns (4) dv/dt MOSFET dv/dt ruggedness 50 V/ns T Operating junction temperature range j - 55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. Pulse width limited by T Jmax. 3. I 9 A, di/dt 100 A/s, V V SD DS(peak) (BR)DSS 4. V 760 V DS Table 2. Thermal data Value Symbol Parameter Unit TO-220, DPAK TO-247 IPAK R Thermal resistance junction-case 1.39 C/W thj-case R Thermal resistance junction-amb 62.5 50 C/W thj-amb (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on 1 inch FR-4 board, 2 oz Cu DS6666 - Rev 5 page 2/26

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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