STP77N6F6 STMicroelectronics

STP77N6F6 N-channel 60 V, 0.0063 typ., 77 A STripFET VI DeepGATE Power MOSFET in a TO-220 package Datasheet production data Features Order code V R max I P DS DS(on) D TOT STP77N6F6 60 V 0.007 77 A 80 W TAB R * Q industry benchmark DS(on) g Extremely low on-resistance R DS(on) 3 2 High avalanche ruggedness 1 TO-220 Low gate drive power losses Very low switching gate charge Applications Switching applications Figure 1. Internal schematic diagram Description % 7 This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET DeepGATE technology, with a new gate structure. The resulting Power MOSFET exhibits * the lowest R in all packages. DS(on) 6 0 Y Table 1. Device summary Order code Marking Package Packaging STP77N6F6 77N6F6 TO-220 Tube May 2013 DocID024067 Rev 2 1/13 This is information on a product in full production. www.st.com 13Contents STP77N6F6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 12 2/13 DocID024067 Rev 2