Product Information

STP80N70F6

Name: STP80N70F6
Brand: STMicroelectronics
SKU: STP80N70F6_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STP80N70F6 electronic component of STMicroelectronics

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Datasheet

STMicroelectronics MOSFET N-Ch 68V 0.0063Ohm 96A STripFET VI

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 - WHS 1 MOQ : 1000 Multiples : 1 STP80N70F6 STMicroelectronics	1000 : USD 0	N/A Obsolete

0 - WHS 2 MOQ : 50 Multiples : 50 STP80N70F6 STMicroelectronics	50 : USD 3.2783 100 : USD 2.374 150 : USD 1.9595 300 : USD 1.4947 550 : USD 1.3063	N/A Obsolete

0 - WHS 3 MOQ : 1 Multiples : 1 STP80N70F6 STMicroelectronics	1 : USD 1.6373 10 : USD 1.3942 100 : USD 1.1082 500 : USD 0.9811 1000 : USD 0.8704 2000 : USD 0.8568 5000 : USD 0.8568 10000 : USD 0.8244 25000 : USD 0.7921	N/A Obsolete

0 - WHS 4 MOQ : 47 Multiples : 1 STP80N70F6 STMicroelectronics	47 : USD 1.6971 100 : USD 1.2393	N/A Obsolete

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Additional Infomation About Product

STP80N70F6 N-channel 68 V, 0.0063 typ., 96 A STripFET VI DeepGATE Power MOSFET in TO-220 package Datasheet production data Features TAB V DSS Order code R max. I P DS(on) D TOT max. < 0.008 STP80N70F6 68 V 96 A 110 W (V = 10 V) GS 3 R * Q industry benchmark DS(on) g 2 1 Extremely low on-resistance R DS(on) TO-220 High avalanche ruggedness Low gate drive power losses Very low switching gate charge Applications Figure 1. Internal schematic diagram Switching applications 4 Description This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET DeepGATE technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R in all packages. DS(on) 3 - V Table 1. Device summary Order code Marking Package Packaging STP80N70F6 80N70F6 TO-220 Tube December 2012 Doc ID 023433 Rev 1 1/13 This is information on a product in full production. www.st.com 13 Obsolete Product(s) - Obsolete Product(s)Contents STP80N70F6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 12 2/13 Doc ID 023433 Rev 1 Obsolete Product(s) - Obsolete Product(s)

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFET MOSFET
RoHS - XON Y Y
Id - Continuous Drain Current 96 A 96 A
Vds - Drain-Source Breakdown Voltage 68 V 68 V
Rds On - Drain-Source Resistance 8 mOhms 8 mOhms
Transistor Polarity N - Channel N - Channel
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 175 C + 175 C
Pd - Power Dissipation 110 W 110 W
Mounting Style Through Hole Through Hole
Package / Case TO - 220 - 3 TO - 220 - 3
Packaging Tube Tube
Technology Si Si
Qg - Gate Charge 99 nC 99 nC
Series Stp80n70f6 Stp80n70f6
Brand Stmicroelectronics Stmicroelectronics
Fall Time 23 ns 23 ns
Rise Time 29 ns 29 ns
Factory Pack Quantity : 50 50
Typical Turn-Off Delay Time 102 ns 102 ns
Cnhts 8541210000 8541210000
Hts Code 8541290075 8541290075
Mxhts 85412999 85412999
Product Type Mosfet Mosfet
Subcategory Mosfets Mosfets
Taric 8541290000 8541290000
Typical Turn-On Delay Time 23 ns 23 ns