STP80N70F6 STMicroelectronics

STP80N70F6 N-channel 68 V, 0.0063 typ., 96 A STripFET VI DeepGATE Power MOSFET in TO-220 package Datasheet production data Features TAB V DSS Order code R max. I P DS(on) D TOT max. < 0.008 STP80N70F6 68 V 96 A 110 W (V = 10 V) GS 3 R * Q industry benchmark DS(on) g 2 1 Extremely low on-resistance R DS(on) TO-220 High avalanche ruggedness Low gate drive power losses Very low switching gate charge Applications Figure 1. Internal schematic diagram Switching applications 4 Description This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET DeepGATE technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R in all packages. DS(on) 3 - V Table 1. Device summary Order code Marking Package Packaging STP80N70F6 80N70F6 TO-220 Tube December 2012 Doc ID 023433 Rev 1 1/13 This is information on a product in full production. www.st.com 13 Obsolete Product(s) - Obsolete Product(s)Contents STP80N70F6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 12 2/13 Doc ID 023433 Rev 1 Obsolete Product(s) - Obsolete Product(s)