STS8C5H30L STMicroelectronics

STS8C5H30L N-channel 30 V, 0.018 typ., 8 A, P-channel 30 V, 0.045 typ., 5 A Power MOSFET in a SO-8 package Datasheet - production data Features Order code Channel V R max I DS DS(on) D 5 N 0.022 8 A 8 STS8C5H30L 30 V P0.055 5 A 4 Conduction losses reduced 1 Switching losses reduced SO-8 Low threshold drive Standard outline for easy automated surface mount assembly Applications Figure 1. Internal schematic diagram Switching applications Description This device is a complementary N-channel and P- channel Power MOSFET developed using STripFET II (P-channel) and STripFET V (N- channel) technologies. The resulting transistors show extremely high packing density for low on- resistance and rugged avalanche characteristics. Table 1. Device summary Order code Marking Packages Packaging STS8C5H30L 8C5H30L SO-8 Tape and reel June 2014 DocID10809 Rev 7 1/18 This is information on a product in full production. www.st.comContents STS8C5H30L Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 7 3 Test circuits . 11 4 Package mechanical data 12 5 Packaging mechanical data 15 6 Revision history . 17 2/18 DocID10809 Rev 7