Product Information

STTH10002TV2

STTH10002TV2 electronic component of STMicroelectronics

Datasheet
STMicroelectronics Rectifiers ULTRAFAST RECOVERY DIODE

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 17.475 ea
Line Total: USD 17.48

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 100
Multiples : 1

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STTH10002TV2
STMicroelectronics

100 : USD 22.516
500 : USD 21.736

0 - WHS 2


Ships to you between Mon. 03 Jun to Wed. 05 Jun

MOQ : 1
Multiples : 1

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STTH10002TV2
STMicroelectronics

1 : USD 25.7828

0 - WHS 3


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

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STTH10002TV2
STMicroelectronics

1 : USD 17.475

0 - WHS 4


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

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STTH10002TV2
STMicroelectronics

1 : USD 20.9597
30 : USD 19.0589
40 : USD 18.6777

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Product
Brand
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
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STTH10002 Ultrafast recovery diode Datasheet production data Features Very low forward losses A1 K2 A1 K1 Low recovery time High surge current capability Insulated package A2 K2 K1 A2 Insulating voltage = 2500 V rms Capacitance = 45 pF A1 A1 Complies with UL standards (File ref: E81734) K1 K2 A2 Description K1 A2 K2 The STTH10002 is a dual rectifier suited for welding equipment, and high power industrial ISOTOP ISOTOP applications. STTH10002TV1 STTH10002TV2 Packaged in ISOTOP, this device is intended for use in the secondary rectification of power converters. Table 1. Device summary I 2 x 50 A F(AV) V 200 V RRM T (max) 150 C j V (typ) 0.72 V F t (typ) 30 ns rr October 2012 Doc ID 12363 Rev 2 1/8 This is information on a product in full production. www.st.com 8Characteristics STTH10002 1 Characteristics Table 2. Absolute ratings (limiting values at T = 25 C, unless otherwise specified) j Symbol Parameter Value Unit V Repetitive peak reverse voltage 200 V RRM I Forward rms current Per diode 150 A F(RMS) Per diode T = 100 C c I Average forward current, = 0.5 50 A F(AV) Per device T = 95 C c I Surge non repetitive forward current t = 10 ms sinusoidal 750 A FSM p T Storage temperature range -55 to + 150 C stg T Maximum operating junction temperature 150 C j Table 3. Thermal parameters Symbol Parameter Value Unit Per diode 1 R Junction to case th(j-c) Total 0.55 C/W R Coupling 0.1 th(c) When the two diodes 1 and 2 are used simultaneously: Tj(diode 1) = P (diode 1) X R (Per diode) + P (diode 2) x R th(j-c) th(c) Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C -- 50 j (1) I Reverse leakage current V = V A R R RRM T = 125 C - 50 500 j I = 50 A - - 1 F T = 25 C j I = 100 A - - 1.15 F (2) T = 125 C I = 100 A - 0.90 1.0 V Forward voltage drop V j F F I = 50 A - 0.72 0.80 F T = 150 C j I = 100 A -0.86 0.97 F 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.63 x I + 0.0034 I F(AV) F (RMS) 2/8 Doc ID 12363 Rev 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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