STTH20L03C High frequency secondary rectifier Datasheet - production data Description A1 K Dual center tap fast recovery epitaxial diodes A2 suited for switch mode power supply and high frequency DC to DC converters. K 2 Packaged either in TO-220AB and D PAK, this device is particularly intended for secondary rectification inside SMPS with high space and power density. A2 Table 1: Device summary K A1 Symbol Value TO-220AB IF(AV) 2 x 10 A VRRM 300 V K K Tj -40 to +175 C V (typ.) 0.8 V F t (typ.) 26 ns rr A2 A2 A1 A1 2 D PAK Features Ultrafast, soft and noise-free recovery Low forward voltage drop meaning very small conduction losses ECOPACK 2 compliant component for DPAK on demand October 2016 DocID023115 Rev 2 1/13 www.st.com This is information on a product in full production. Characteristics STTH20L03C 1 Characteristics Table 2: Absolute ratings (limiting values, per diode, at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 300 V I Forward rms current 30 A F(RMS) T = 155 C Per diode 10 C Average forward current IF(AV) A = 0.5, square wave T = 150 C Per device 20 C Surge non repetitive forward IFSM tp = 10 ms sinusoidal 150 A current Tstg Storage temperature range -65 to +175 C T Maximum operating junction temperature range -40 to +175 C j Table 3: Thermal parameters Symbol Parameter Max. value Unit Per diode 1.5 R Junction to case C/W th(j-c) Total 1.0 R Coupling 0.5 C/W th(c) When the diodes 1 and 2 are used simultaneously: T = P x R (per diode) + P x R j (diode1) (diode1) th(j-c) (diode2) th(c) Table 4: Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 10 j (1) IR Reverse leakage current VR = VRRM A Tj = 125 C - 10 100 T = 25 C - 0.95 1.2 j (2) VF Forward voltage drop IF = 10 A V Tj = 125 C - 0.8 0.95 Notes: (1) Pulse test: tp = 5 ms, < 2% (2) Pulse test: t = 380 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.8 x I + 0.015 x I F(AV) F (RMS) 2/13 DocID023115 Rev 2