STTH2L06 STMicroelectronics

STTH2L06 High efficiency ultrafast diode Features A K Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature Description DO-41 The STTH2L06 is using ST Turbo 2 600 V planar STTH2L06 Pt doping technology. It is specially suited for SMPS and base drive transistor circuits. Packaged in axial, SMA and SMB, this device is intended for use in high frequency inverters, free wheeling and polarity protection. SMA SMB STTH2L06A STTH2L06U Table 1. Device summary Symbol Value I 2 A F(AV) V 600 V RRM T 175 C j V (typ) 0.85 V F t (max) 60 ns rr October 2009 Doc ID10758 Rev 2 1/9 www.st.com 9Characteristics STTH2L06 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit V Repetitive peak reverse voltage 600 V RRM I Forward rms current 7 A F(RMS) DO-41 T = 90 C 2 l I Average forward current, = 0.5 SMA T = 100 C 2 A F(AV) l SMB T = 115 C 2 l DO-41 45 t = 10 ms p I Surge non repetitive forward current A FSM sinusoidal SMA / SMB 35 T Storage temperature range -65 to + 175 C stg T Maximum operating junction temperature 175 C j Table 3. Thermal resistance Symbol Parameter Maximum Unit DO-41 L = 5 mm 35 R Junction to lead SMA 30 C/W th(j-l) SMB 25 Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C 2 j Reverse leakage (1) I V = V A R R RRM current T = 150 C 12 85 j T = 25 C 1.3 j (2) V Forward voltage drop I = 2 A V F F T = 150 C 0.85 1.05 j 1. Pulse test: t = 5 ms, < 2 % p 2. Pulse test: t = 380 s, < 2 % p To evaluate the maximum conduction losses use the following equation: 2 P = 0.89 x I + 0.08 I F(AV) F (RMS) 2/9 Doc ID10758 Rev 2