T2550-12G, T2550-12T, T2550-12I Datasheet 25 A, 1200 V Snubberless Triacs A2 Features On-state RMS current: 25 A Blocking voltage: 1200 V G High static community and dynamic commutation A1 I = 50 mA A2 GT High endurance reliability Compact high voltage device G G A2 UL recognized component : UL1557 standard, reference file E81734 A2 A1 A1 TO-220AB TO-220AB Ins. A2 Applications Motor control circuits Heating control circuits G A2 A1 DPAK Description The T2550-12x is a 25 A 1200 V Snubberless Triac available in three packages: DPAK, TO-220AB and TO-220AB insulated. Its 1200 V blocking voltage enables use in 3-phase industrial application. Its noise immunity and dynamic commutation makes it suitable for either inductive, capacitive or resistive load control. Product status link T2550-12G, T2550-12T, T2550-12I Product summary I 25 A T(RMS) V /V 1200 V DRM RRM I 50 mA GT DS10039 - Rev 5 - September 2020 www.st.com For further information contact your local STMicroelectronics sales office.T2550-12G, T2550-12T, T2550-12I Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values, T = 25 C, unless otherwise stated) j Symbol Parameters Value Unit T = 100 C DPAK, TO-220AB c I RMS on-state current (full sine wave) 25 A T(RMS) T = 71 C TO-220AB Ins. c t = 20 ms 240 Non repetitive surge peak on-state current p I A TSM (full cycle, T initial = 25 C) j t = 16.7 ms 252 p 2 2 2 t = 10 ms 380 I t I t value for fusing p A s Critical rate of rise of on-state current T = 125 C dl/dt f = 60 Hz 100 A/s j I = 2 x I , t 100 ns G GT r V /V Repetitive peak off-state voltage 1200 V DRM RRM V /V t = 10 ms DSM RSM Non repetitive surge peak off-state voltage p 1300 V I t = 20 s Peak gate current 4 A GM p V t = 20 s Peak positive gate voltage 16 V GM p P Average gate power dissipation 1 W G(AV) T Storage junction temperature range -40 to +150 C stg T Operating junction temperature range -40 to +125 C j V Insulation RMS voltage, 1 minute TO-220AB Ins. 2500 V ins. Table 2. Electrical characteristics (T = 25 C, unless otherwise specified) - Snubberless (3 quadrants) j Symbol Parameters Quadrant Value Unit Min. 2.5 I I - II - III mA GT V = 12 V, R = 33 Max. 50 D L V I - II - III Max. 1.3 V GT V V = V , R = 3,3 k, T = 125 C I - II - III Min. 0.2 V GD D DRM L j (1) I I = 500 mA, gate open Max. 60 mA H T I I = 1.2 I I - II - III Max. 80 mA L G GT (1) V = 67 % V gate open, T = 125 C dV/dt Min. 2500 V/s D DRM j (1) Without snubber, T = 125 C (dI/dt)c Min. 20 A/ms j t I = 13 A, V = 400 V, I = 100 mA, dl /dt = 100 mA/s, R = 30 I - II - III Typ. 2 s gt TM D G G L 1. For both polarities of A2 referenced to A1 DS10039 - Rev 5 page 2/14