T3035H-8G Datasheet 30 A - 800 V - 150 C 8H Triac in DPAK Features A2 30 A high current Triac 800 V symmetrical blocking voltage G 150 C maximum junction temperature T j Three triggering quadrants A1 High noise immunity - static dV/dt A2 Robust dynamic turn-off commutation - (dl/dt)c ECOPACK2 compliant component Applications Home automation Smart AC plug A2 A1 Water heater, room heater and coffee machine G AC Induction and Universal Motor control Inrush current limiter in AC DC rectifiers DPAK Lighting and automation I/O control General purpose AC line load control Description Specifically designed to operate at 800 V and 150 C, the T3035H-8G Triac housed in DPAK provides an enhanced thermal management: this 30 A triac is the right choice for a compact drive of heavy AC loads and enables the heatsink size Product status link reduction. T3035H-8G Based on the ST Snubberless high temperature technology, it offers higher specified turn off commutation and noise immunity levels up to the T max. Product summary j The T3035H-8G safely optimizes the control of the hardest universal motors, heaters I 30 A T(RMS) and inductive loads for industrial control and home appliances. V /V 800 V DRM RRM Available in DPAK package, it is suitable for compact SMD designs on surface V /V 900 V DSM RSM mount boards or insulated metal substrate or direct bond copper boards. I 35 mA GT DS12705 - Rev 5 - December 2020 www.st.com For further information contact your local STMicroelectronics sales office.T3035H-8G Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values) Symbol Parameter Value Unit I T = 121 C RMS on-state current (full sine wave) 30 A T(RMS) c t = 16.7 ms Non repetitive surge peak on-state current 283 p I A TSM (full cycle, T initial = 25 C) j t = 20 ms 270 p 2 2 2 t = 10 ms 482 I t I t value for fusing p A s Critical rate of rise of on-state current, dl/dt T = 25 C 100 A/s j I = 2 x I , tr 100 ns, f = 100 Hz G GT V /V Repetitive peak off-state voltage 800 V DRM RRM V /V t = 10 ms, T = 25 C Non Repetitive peak off-state voltage 900 V DSM RSM p j I Peak gate current 4 A GM t = 20 s, T = 150 C p j P Maximum gate power dissipation 5 W GM P Average gate power dissipation T = 150 C 1 W G(AV) j T Storage temperature range -40 to +150 C stg T Operating junction temperature range -40 to +150 C j Table 2. Electrical characteristics (T = 25 C, unless otherwise specified) j Symbol Test conditions Quadrants Value Unit V = 12 V, R = 30 I - II - III Min. 5 mA D L I GT V = 12 V, R = 30 I - II - III Max. 35 mA D L V V = 12 V, R = 30 I - II - III Max. 1.3 V GT D L V V = V , R = 3.3 k T = 150 C I - II - III Min. 0.15 V GD D DRM L j I - III Max. 75 mA I I = 1.2 x I L G GT II Max. 90 mA (1) I I = 500 mA, gate open Max. 60 mA H T (1) V = 536 V, gate open T = 150 C Min. 2000 V/s dV/dt D j (1) Without snubber network T = 150 C Min. 25 A/ms (dl/dt)c j 1. For both polarities of A2 referenced to A1. DS12705 - Rev 5 page 2/12