T435-600H STMicroelectronics

T435-600H electronic component of STMicroelectronics
T435-600H STMicroelectronics
T435-600H Triacs
T435-600H  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of T435-600H Triacs across the USA, India, Europe, Australia, and various other global locations. T435-600H Triacs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Triacs, ensuring timely deliveries around the world.

Part No.T435-600H
Manufacturer:STMicroelectronics
Category:Triacs
Description:STMicroelectronics Triacs 4.0 Amp 600 Volt
Datasheet:T435-600H Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
3000: USD 0.203 ea
Line Total: USD 609 
Availability : 0
  
QtyUnit Price
3000$ 0.203
6000$ 0.1995
9000$ 0.196
12000$ 0.196
  

Availability0
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.203
6000$ 0.1995
9000$ 0.196
12000$ 0.196


Availability0
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 5.6545
10$ 3.263
50$ 2.9151
100$ 2.5593
500$ 2.3993
1000$ 2.3293


Availability0
Ship by Mon. 22 Jun to Wed. 24 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 4.26
10$ 1.6
25$ 1.464
100$ 1.194
500$ 0.9864
1000$ 0.7836
3000$ 0.7824

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Series
Mounting Style
Packaging
Off-State Leakage Current Vdrm Idrm
Package Case
Brand
Factory Pack Quantity :
Current Rating
Cnhts
Hts Code
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the T435-600H from our Triacs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the T435-600H and other electronic components in the Triacs category and beyond.

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T4 series 4 A Triacs Datasheet production data . Table 1. Main characteristics Symbol Value Unit I 4A T(rms) * V , V 600 to 800 V DRM RRM I 5 to 35 mA GT Table 2. Device summary * 2 % 7 (1) . ,3 Symbol Marking * T405-xxxB T405-xxxB-TR T405-xxxH * . 3 T405-xxxT T410-xxxB T410-xxxB-TR see Table 11 Features T410-xxxH Three quadrants Triac T410-xxxT 600 to 800 V V /V DRM RRM T435-xxxB T435-xxxB-TR Applications T435-xxxH General purpose AC inductive loads T435-xxxT Motor control circuits 1. xxx = Voltage: 600 V, 700 V or 800 V (see Table 10). Small home appliances Description Based on STs Snubberless / logic level technology providing high commutation performances, the T4 series is suitable for use on AC inductive loads. They are recommended for applications using universal motors, electro valves, kitchen aid equipments, power tools, and dishwashers. November 2016 DocID7699 Rev 9 1/15 This is information on a product in full production. www.st.com 15Characteristics T4 series 1 Characteristics Table 3. Absolute maximum ratings (T = 25 C unless otherwise stated) j Symbol Parameter Value Unit On-state rms current IPAK, DPAK, I T = 110 C 4 A T(rms) c TO-220AB (full sine wave) F = 50 Hz t = 20 ms 30 Non repetitive surge peak on-state I A TSM current (full cycle, T initial = 25 C) j F = 60 Hz t = 16.7 ms 31 ItI t value for fusing t = 10 ms 5.1 A s p Critical rate of rise of on-state dI/dt F = 120 Hz T = 125 C 50 A/s j current I = 2 x I , t 100 ns G GT r I Peak gate current t = 20 s T = 125 C 4 A GM p j P Average gate power dissipation T = 125 C 1 W G(AV) j T Storage junction temperature range - 40 to +150 stg C T Operating junction temperature range - 40 to +125 j Table 4. Electrical characteristics (T = 25 C, unless otherwise stated) j Value Unit Symbol Test conditions Quadrant T405 T410 T435 (1) I V = 12 V, R = 30 I - II - III Max. 5 10 35 mA GT D L V V = 12 V, R = 30 I - II - III Max. 1.3 V D L GT V V = V , R = 3.3 k , T = 125 C I - II - III Min. 0.2 V GD D DRM L j (2) I I = 100 mA Max. 10 15 35 mA H T I - III Max. 102550 I I = 1.2 I mA L G GT II Max. 15 30 60 (2) dV/dt V = 67% V , gate open T = 125 C Min. 20 40 400 V/s D DRM j (dV/dt)c = 0.1 V/s 1.8 2.7 (2) (dI/dt)c (dV/dt)c = 10 V/s T = 125 C Min. 0.9 2.0 A/ms j (without snubber) 2.5 1. Minimum I is guaranteed at 5% of I max. GT GT 2. For both polarities of A2 referenced to A1 2/15 DocID7699 Rev 9

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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