X-On Electronics has gained recognition as a prominent supplier of T835T-8FP Triacs across the USA, India, Europe, Australia, and various other global locations. T835T-8FP Triacs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Triacs, ensuring timely deliveries around the world.

T835T-8FP STMicroelectronics

T835T-8FP electronic component of STMicroelectronics
T835T-8FP STMicroelectronics
T835T-8FP Triacs
T835T-8FP  Semiconductors

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See Product Specifications
Part No. T835T-8FP
Manufacturer: STMicroelectronics
Category: Triacs
Description: TRIAC Alternistor - Snubberless 800 V 8 A Through Hole TO-220FPAB
Datasheet: T835T-8FP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.4372 ea
Line Total: USD 1.44 
Availability - 48
Ship by Fri. 16 May to Wed. 21 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
48
Ship by Fri. 16 May to Wed. 21 May
MOQ : 1
Multiples : 1
1 : USD 1.4372
10 : USD 1.171
50 : USD 0.7005
100 : USD 0.6125
500 : USD 0.5593
1000 : USD 0.5319

   
Manufacturer
Product Category
On-State RMS Current - It RMS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
Off-State Leakage Current @ VDRM IDRM
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Series
Mounting Style
Packaging
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the T835T-8FP from our Triacs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the T835T-8FP and other electronic components in the Triacs category and beyond.

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T835T-8FP 8 A Snubberless Triac Datasheet production data Features A2 Medium current Triac High static and dynamic commutation G A1 Three quadrants ECOPACK 2 compliant component Complies with UL standards (File ref: E81734) Applications General purpose AC line load switching G A2 Motor control circuits A1 Small home appliances Lighting Inrush current limiting circuits TO-220FPAB (T835T-8FP) Overvoltage crowbar protection Description Table 1. Device summary Available in through-hole full pack package, the Symbol Value Unit T835T-8FP Triac can be used for the on/off or phase angle control function in general purpose I 8A T(rms) AC switching where high commutation capability V , V 800 V DRM RRM is required. This device can be used without a V , V 900 V snubber circuit when the limits defined in this DSM RSM datasheet are respected I 35 mA GT Provides UL certified insulation rated at 2 kV. TM: Snubberless is a trademark of STMicroelectronics January 2015 DocID024248 Rev 2 1/9 This is information on a product in full production. www.st.com 9Characteristics T835T-8FP 1 Characteristics Table 2. Absolute maximum ratings (T = 25 C unless otherwise stated) j Symbol Parameter Value Unit I On-state rms current (full sine wave) T = 113C 8 A T(rms) c F = 50 Hz t = 20 ms 60 Non repetitive surge peak on-state I A TSM current (full cycle, T initial = 25 C) j F = 60 Hz t = 16.7 ms 63 ItI t value for fusing, T initial = 25 C t = 10 ms 24 A s j p T = 150 C 600 j V , DRM Repetitive surge peak off-state voltage V V RRM T = 125 C 800 j V , DSM Non repetitive surge peak off-state voltage t = 10 ms 900 V p V RSM Critical rate of rise of on-state dI/dt F = 100 Hz 100 A/s current I = 2 x I , t 100 ns G GT r I Peak gate current t = 20 s T = 150 C 4 A GM p j P Average gate power dissipation T = 150 C 1 W G(AV) j T Storage junction temperature range - 40 to + 150 stg C T Operating junction temperature range - 40 to + 150 j T Maximum lead temperature for soldering during 10 s 260 C L V Insulation rms voltage, 1 minute 2 kV ins Table 3. Electrical characteristics (T = 25 C, unless otherwise stated) j Symbol Test conditions Quadrant Value Unit Min. 1.75 (1) I V = 12 V, R = 30 I - II - III mA GT D L Max. 35 V = 12 V, R = 30 V I - II - III Max. 1.3 V D L GT V V = V , R = 3.3 k, T = 150 C I - II - III Min. 0.2 V GD D DRM L j (1) I I = 500 mA Max. 40 mA H T I - III Max. 60 mA I I = 1.2 I L G GT II Max. 65 mA T = 125 C V = 536 V, gate open 2000 V/s j D (1) dV/dt Min. T = 150 C V = 402 V, gate open 1000 V/s j D T = 125 C 8 j (1) (dI/dt)c Without snubber (dV/dt)c 20 V/s) Min. A/ms T = 150 C 4 j 1. For both polarities of A2 referenced to A1 2/9 DocID024248 Rev 2

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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