USBULC6-2F7 STMicroelectronics

USBULC6-2F7 2-line Transil ultralow capacitance protection for high speed USB Datasheet production data Description The USBULC6-2F7 is a monolithic, application specific discrete device dedicated to ESD protection of high speed interfaces. Its ultra low line capacitance secures a high level of signal integrity without compromising the Flip Chip protection of downstream sensitive chips against (4 bumps) the most stringently characterized ESD strikes. Figure 1. Pin layout (bump side) Features A B Ultralow capacitance (1pF) Two data lines (D+ and D-) protected against 1 ESD Breakdown voltage V = 5.5 V min. BR 2 Flip Chip 350 m pitch, lead-free Very low leakage current Very small PCB area Figure 2. Device configuration RoHS compliant A1 B1 Benefits Minimized impact on rise and fall times for maximum data integrity Low PCB space occupation Higher reliability offered by monolithic integration Complies with the following standards IEC 61000-4-2 level 4: B2 A2 8 kV (contact discharge) MIL STD 883G - Method 3015.7 Note: B1 and B2 bumps must be grounded on the PCB together 25 kV (Human body model) Application This device is designed to protect a high speed USB port in wireless handsets (up to 480 Mb/s according to USB 2.0 high speed specification). TM: Transil is a trademark of STMicroelectronics December 2013 DocID025264 Rev 1 1/9 This is information on a product in full production. www.st.comCharacteristics USBULC6-2F7 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit ESD discharge IEC 61000-4-2: V Contact discharge 10 kV PP Air discharge 30 P Peak pulse power dissipation (8/20 s) 50 W PP T Operation junction temperature range -40 to +150 C j T Storage temperature range -55 to +150 C stg (1) T Maximum lead temperature for soldering during 10 s 260 C L 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Figure 3. Electrical characteristics - definitions I Symbol Parameter V Breakdown voltage BR IF I Leakage current V RM RM V Stand-off voltage RM V Clamping voltage CL I Peak pulse current PP C Line capacitance LINE V F V Forward voltage drop VCL VBR VRM F V I RM I PP Table 2. Electrical characteristics - values (T = 25 C) amb Symbol Test conditions Min. Typ. Max. Unit V I = 1 mA 5.5 - 9 V BR R I V = 3 V - - 70 nA RM RM C F = 200 MHz - 3000MHz , V = 0 V - 1.0 1.35 pF line R I/O to GND 0.67 R Dynamic resistance, pulse width 100 ns d GND to I/O 0.56 2/9 DocID025264 Rev 1