Product Information

1N4001 R0

1N4001 R0 electronic component of Taiwan Semiconductor

Datasheet
Diode 50V 1A 2-Pin DO-41 T/R

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10000: USD 0.0079 ea
Line Total: USD 79

0 - Global Stock
MOQ: 10000  Multiples: 5000
Pack Size: 5000
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 14 May to Mon. 20 May

MOQ : 10000
Multiples : 5000

Stock Image

1N4001 R0
Taiwan Semiconductor

10000 : USD 0.0079

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Configuration
Vf - Forward Voltage
Max Surge Current
Packaging
Brand
Operating Temperature Classification
Operating Temp Range
Rev Curr
Avg Forward Curr Max
Package Type
Peak Rep Rev Volt
Rad Hardened
Pin Count
LoadingGif

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CREAR BY ART 1N4001 - 1N4007 1.0 AMPS. Silicon Rectifiers DO-41 RoHSRoHS Pb CCOOMMPPLILIANANCECE Features High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix on packing code & prefix on datecode Mechanical Data Case: Molded plastic Epoxy: UL 94V-0 rate flame retardant Dimensions in inches and (millimeters) Marking Diagram Lead: Pure tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed Polarity: Color band denotes cathode 1N400X = Specific Device Code G = Green Compound High temperature soldering guaranteed: 260/10s /.375 , (9.5mm) lead lengths at 5 lbs, (2.3kg) tension Y = Year Weight: 0.35 grams WW = Work Week Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% 1N 1N 1N 1N 1N 1N 1N Symbol Unit Type Number 4001 4002 4003 4004 4005 4006 4007 Maximum Repetitive Peak Reverse Voltage V 50 100 200 400 600 800 1000 V RRM Maximum RMS Voltage V 35 70 140 280 420 560 700 V RMS Maximum DC Blocking Voltage V 50 100 200 400 600 800 1000 V DC Maximum Average Forward Rectified Current I 1A F(AV) .375 (9.5mm) Lead Length T =75 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave I 30 A FSM Superimposed on Rated Load (JEDEC method) 2 2 Rating for Fusing (t<8.3ms) 3.7 ITA S Maximum Instantaneous Forward Voltage (Note 1) V 1.0 V F 1 A 5 Maximum Reverse Current Rated VR T =25 A I uA R T =125 50 A Maximum Full load Reverse Current, Full cycle Average .375 (9.5mm) Lead Lenfth I 30 uA R(AV) T =75 A Typical Junction Capacitance (Note 2) 10 Cj pF R 65 jA O Typical Thermal Resistance R 6 jC C/W R 15 jL O Operating Temperature Range T - 65 to + 150 J C O Storage Temperature Range T - 65 to + 150 STG C Note1: Pulse Test with PW=300 usec, 1% Duty Cycle Note2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Version:F11RATINGS AND CHARACTERISTIC CURVES (1N4001 THRU 1N4007) FIG.1 MAXMUM FORWARD CURRENT DERATING FIG. 2 MAXIMUM NON-REPETITIVE FORWARD CURVE SURGE CURRENT 1.5 50 8.3ms Single Half Wave JEDEC Method 40 1 30 20 0.5 10 0 0 0 25 50 75 100 125 150 175 1 10 100 o AMBIENT TEMPERATURE( C) NUMBER OF CYCLES AT 60 Hz FIG. 4 TYPICAL REVERSE CHARACTERISTICS FIG. 3 TYPICAL FORWARD CHARACTERISTICS 10 10 TA=125 1 1 0.1 0.1 TA=25 0.01 0.01 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 0 20 40 60 80 100 120 140 FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 5 TYPICAL JUNCTION CAPACITANCE 100 10 1 0.1 1 10 100 REVERSE VOLTAGE (V) Version:F11 AVERAGE FORWARD CAPACITANCE (pF) INSTANTANEOUS FORWARD CURRENT(A) CURRENT (A) PEAK FORWARD SURGE REVERSE LREAKAGE CURRENT (uA) CURRENT(A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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