1SMA4737

1SMA4737 1SMA200Z Taiwan Semiconductor 1W, 7.5V - 200V Surface Mount Zener Diode FEATURES KEY PARAMETERS Ideal for automated placement PARAMETER VALUE UNIT Glass passivated chip junction V 7.5 - 200 V Z Low inductance Test current I 1.2 - 34 mA Typical I less than 1A above 11V ZT R Moisture sensitivity level: level 1, per J-STD-020 P 1 W D RoHS Compliant T 175 C J MAX Halogen-free according to IEC 61249-2-21 Package DO-214AC (SMA) Configuration Single die APPLICATIONS For general purpose regulation and protection applications MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.060g (approximately) DO-214AC (SMA) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT Power dissipation, R <76.8 K/W, T = 25C P 1 W THJA A D Power dissipation, R <76.8 K/W, T = 60C P 1.25 W THJA A D (1) Non repetitive peak power dissipation P 60 W ZSM Peak forward surge current, 8.3ms single half sine-wave I 30 A FSM superimposed on rated load Junction temperature T -55 to +175 C J Storage temperature T -55 to +175 C STG Notes: 1. Non Repetitive Peak surge P Test Condition: tp = 100s sq. pulse, T = 25C prior to surge D A 1 Version: P2102 1SMA4737 1SMA200Z Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A Nominal Test Zener Leakage Surge Zener current Impedance current current voltage Marking Part number V I I Z I Z I I V I Z Z ZT ZT ZT ZK ZK R R R (Note 1) code V mA mA A V mA (Note 2) Max (Note 3) 1SMA4737 737A 7.5 34 4 700 0.50 5 5.0 605 1SMA4738 738A 8.2 31 4.5 700 0.50 5 6.0 550 1SMA4739 739A 9.1 28 5 700 0.50 5 7.0 500 1SMA4740 740A 10 25 7 700 0.25 5 7.6 454 1SMA4741 741A 11 23 8 700 0.25 1 8.4 414 1SMA4742 742A 12 21 9 700 0.25 1 9.1 380 1SMA4743 743A 13 19 10 700 0.25 1 9.9 344 1SMA4744 744A 15 17 14 700 0.25 1 11.4 304 1SMA4745 745A 16 15.5 16 700 0.25 1 12.2 285 1SMA4746 746A 18 14.0 20 750 0.25 1 13.7 250 1SMA4747 747A 20 12.5 22 750 0.25 1 15.2 225 1SMA4748 748A 22 11.5 23 750 0.25 1 16.7 205 1SMA4749 749A 24 10.5 25 750 0.25 1 18.2 190 1SMA4750 750A 27 9.5 35 750 0.25 1 20.6 170 1SMA4751 751A 30 8.5 40 1000 0.25 1 22.8 150 1SMA4752 752A 33 7.5 45 1000 0.25 1 25.1 135 1SMA4753 753A 36 7.0 50 1000 0.25 1 27.4 125 1SMA4754 754A 39 6.5 60 1000 0.25 1 29.7 115 1SMA4755 755A 43 6.0 70 1500 0.25 1 32.7 110 1SMA4756 756A 47 5.5 80 1500 0.25 1 35.8 95 1SMA4757 757A 51 5.0 95 1500 0.25 1 38.8 90 1SMA4758 758A 56 4.5 110 2000 0.25 1 42.6 80 1SMA4759 759A 62 4.0 125 2000 0.25 1 47.1 70 1SMA4760 760A 68 3.7 150 2000 0.25 1 51.7 65 1SMA4761 761A 75 3.3 175 2000 0.25 1 56.0 60 1SMA4762 762A 82 3.0 200 3000 0.25 1 62.2 55 1SMA4763 763A 91 2.8 250 3000 0.25 1 69.2 50 1SMA4764 764A 100 2.5 350 3000 0.25 1 76.0 45 1SMA110Z 110A 110 2.3 450 4000 0.25 1 83.6 - 1SMA120Z 120A 120 2.0 550 4500 0.25 1 91.2 - 1SMA130Z 130A 130 1.9 700 5000 0.25 1 98.8 - 1SMA150Z 150A 150 1.7 1000 6000 0.25 1 114.0 - 1SMA160Z 160A 160 1.6 1100 6500 0.25 1 121.6 - 1SMA180Z 180A 180 1.4 1200 7000 0.25 1 136.8 - 1SMA200Z 200A 200 1.2 1500 8000 0.25 1 152.0 - Note: 1. Tolerance and Type Number Designation. The type numbers listed have a standard tolerance on the nominal zener voltage of 5% 2. Specials Available Include: A. Nominal zener voltages between the voltages shown and tighter voltage tolerances B. Matched sets 3. Zener Voltage (V ) Measurement. Guarantees the zener voltage when measured at 90 seconds while z maintaining the lead temperature(T ) at 30 1C, from the diode body L 4. Zener Impedance (Z ) Derivation. The zener impedance is derives from the 60 cycle AC voltage, which results z when an ac current having and rms value equal to 10% of the DC zener current (I or I ) is superimposed on ZT ZK I or I ZT ZK 5. Surge Current (I ) Non-Repetitive. The rating list in the electrical characteristics table is maximum peak, non- R repetitive, reverse surge current of 1/2 square wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current, I per JEDEC registration however, actual device capability is as described in ZT Figure.10 2 Version: P2102