Product Information

BZD27C15P R2

BZD27C15P R2 electronic component of Taiwan Semiconductor

Datasheet
Diode Zener Single 14.7V 6% 1W 2-Pin Sub SMA T/R

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

7500: USD 0.0567 ea
Line Total: USD 425.25

0 - Global Stock
MOQ: 7500  Multiples: 7500
Pack Size: 7500
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 7500
Multiples : 7500

Stock Image

BZD27C15P R2
Taiwan Semiconductor

7500 : USD 0.0567

     
Manufacturer
Product Category
Vz - Zener Voltage
Voltage Tolerance
Pd - Power Dissipation
Configuration
Mounting Style
Packaging
Rev Curr
Operating Temperature Classification
Type
Package Type
Knee Impedance
Rad Hardened
Pin Count
Operating Temp Range
Zener Test Current
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CREAT BY ART BZD27C SERIES 1.0 Watts Voltage Regulator Diodes Sub SMA RoRoHSHS Pb COCOMPLMPLIIAANNCCEE Features Silicon zener diodes Low profile surface-mount package Zener and surge current specification Low leakage current Excellent stability High temperature soldering guaranteed: 260 / 10 seconds/ .375 , (9.5mm) lead length Green compound with suffix on packing code & prefix on datecode Dimensions in inches and (millimeters) Mechanical Data Case: Sub SMA Plastic Marking Diagram Terminals: Pure tin plated, lead free XX = Specific Device Code Packaging method: refer to package code G = Green Compound Marking code: as table Y = Year Weight: 0.0196 gram WW = Work Week Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. Symbol Value Unit Type Number Forward Voltage I =0.2A V 1.2 Volts F F Power Dissipation at TL=80 2.3 Ptot Watts 1.0 TA=25 (Note 1) Non-Repetitive Peak Pulse Power Dissipation P 300 Watts ZSM 100us square pulse (Note 2) Non-Repetitive Peak Pulse Power Dissipation 10/1000us waveform (BZD27C11P to BZD27C100P) P 150 Watts RSM (Note 2) Non-Repetitive Peak Pulse Power Dissipation P 10/1000us waveform (BZD27C110P to BZD27C220P) 100 Watts RSM (Note 2) Thermal Resistance Junction to Ambient Air (Note 1) R 180 JA /W Thermal Resistance Junction to Lead R 30 JL /W Operating and Storage Temperature Range T , T -65 to +175 J STG Note 1: Mounted on Cu-Pad size 5mm x 5mm ( 40um thick) Note 2: T =25 Prior to Surge J Version:Q11RATINGS AND CHARACTERISTIC CURVES (BZD27C SERIES) FIG. 1 TYPICAL FORWARD CHARACTERISTICS FIG. 2 TYP. DIODE CAPACITANCE vs REVERSE VOLTAGE 10 10000 1000 C12P TYP. VF MAX. VF 1 100 C27P C200P 10 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 REVERSE VOLTAGE FORWARD VOLTAGE (V) FIG. 4 MAXIMUM PULSE POWER DISSPATION vs FIG.3 POWER DISSIPATION vs ZENER VOLTAGE AMBIENT TEMPERATURE 3 160 2.5 140 120 2 100 1.5 80 1 60 0.5 40 20 0 0 25 50 75 100 125 150 175 0 o AMBIENT TEMPERATURE( C) 0 25 50 75 100 125 150 175 200 225 250 ZENER VOLTAGE (V) Version:Q11 INSTANTANEOUS FORWARD POWER DISSIPATION(W) CURRENT (A) TYP. JUNCTION CAPACITANCE MAX PULSE POWER (pF) DISSIPATION (W)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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