Product Information

BZW06-13B R0G

BZW06-13B R0G electronic component of Taiwan Semiconductor

Datasheet
ESD Suppressors TVS Diodes 600W 15.1V -% Bidirectional TVS

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6831 ea
Line Total: USD 0.68

3375 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3237 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

BZW06-13B R0G
Taiwan Semiconductor

1 : USD 0.4711
10 : USD 0.3975
100 : USD 0.2764
500 : USD 0.2195
1000 : USD 0.1827
3500 : USD 0.1436
7000 : USD 0.1305
24500 : USD 0.1305
49000 : USD 0.1258

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Packaging
Brand
Factory Pack Quantity :
Subcategory
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BZW06 SERIES Taiwan Semiconductor CREAT BY ART 600W, 13V - 376V Transient Voltage Suppressor FEATURES - Excellent clamping capability - Low dynamic impedance - 600W surge capability at 10 / 1000 s waveform - Fast response time: Typically less than 1.0ps from 0 volt to V for unidirectional BR and 5.0ns for bidirectional - Typical I less than 1A above 10V R - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 DO-204AC (DO-15) MECHANICAL DATA Case: DO-204AC (DO-15) Molding compound: UL flammability classification rating 94V-0 Part No. with suffix means AEC-Q101 qualified Packing code with suffix means green compound (halogen-free) Terminal: Pure tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Weight: 0.4g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A PARAMETER VALUE UNIT SYMBOL Peak power dissipation at T =25C, Tp=1ms (Note 1) P 600 W A PK Steady state power dissipation at T =75C L P 1.7 W D lead lengths .375 , 9.5mm Peak forward surge current, 8.3 ms single half sine-wave I 100 A FSM superimposed on rated load Junction to leads R 60 JL C/W Junction to ambient on printed circuit R 100 JA L lead=10mm Operating junction temperature range T - 55 to +175 C J Storage temperature range T - 55 to +175 C STG Note 1: Non-repetitive current pulse, per fig. 3 ORDERING INFORMATION PART NO. PACING CODE PART NO. PACKING CODE PACKAGE PACKING SUFFIX SUFFIX A0 DO-15 1,500 / Ammo box BZW06-xxx H R0 G DO-15 3,500 / 13 Paper reel (Note 1) B0 DO-15 1,000 / Bulk packing Note 1:xx defines voltage from 12.8V (BZW06-13) to 376V (BZW06-376) EXAMPLE EXAMPLE PART NO. PACING CODE PACKING CODE DESCRIPTION PART NO. PART NO. SUFFIX SUFFIX AEC-Q101 qualified BZW06-20HA0G BZW06-20 H A0 G Green compound Version: J1602BZW06 SERIES Taiwan Semiconductor RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A FIG. 1 PEAK PULSE POWER RATING CURVE FIG.2 PULSE DERATING CURVE 100000 120 Non-repetitive pulse waveform 100 10000 shown in fig.3 80 1000 60 40 100 20 0 10 0 20 40 60 80 100 120 140 160 180 200 0. 001 0. 01 0. 1 1 10 100 o T , AMBIENT TEMPERATURE ( C) A tp, PULSE WIDTH, (ms) FIG. 3 CLAMPING POWER PULSE WAVEFORM FIG. 4 CLAMPING VOLTAGE CURVE 1000 Pulse width(td) is defined BWZ06-376 140 as the point where the peak tr=10s current decays to 50% of I PPM 120 BWZ06-188 Peak Value I PPM 100 Half value-I /2 PPM 80 10/1000s, waveform 100 BWZ06-58 as defined by R.E.A. 60 BWZ06-33 40 BWZ06-19 20 BWZ06-10 td 0 10 BWZ06-5V8 0 0.511.522.533.5 4 t, TIME ms tp=20s tp=1ms tp=10ms 1 FIG. 5 TYPICAL JUNCTION CAPACITANCE 0 1 10 100 1 00 0 10 00 0 Ipp, PEAK PULSE CURRENT(A) BZW06-13 10 00 BZW06-58 10 0 f=1.0MHz BZW06-171 Vsig=50mVp-p 10 1 10 10 0 10 00 V( ), BREAKDOWN VOLTAGE (V) BR Version: J1602 CJ, JUNCTION CAPACITANCE (pF) A PEAK PULSE CURRENT (%) P , PEAK PULSE POWER, W PPM V , CLAMPING VOLTAGE(V) CL PEAK PULSE POWER(P ) OR CURRENT (I ) A PP PP DERATING IN PERCENTAGE (%)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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